ATM2302BNSA Todos los transistores

 ..1. Size:510K  agertech
 atm2302bnsa.pdf

ATM2302BNSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3A Features Trench Power LV MOSFET technology High power and current handing capability R

 7.1. Size:607K  agertech
 atm2302nsa.pdf

ATM2302NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3.3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 8.1. Size:759K  agertech
 atm2305psa.pdf

ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -15V Drain Current -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V) 36.4 mohm RDS(ON)( at VGS=-2.5V) 53.0 mohm RDS(ON)( at VGS=-1.8V) 62.0 mohm Applications Battery protection Load switch Power manag

 8.2. Size:497K  agertech
 atm2301psc.pdf

ATM2301PSC P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 8.3. Size:445K  agertech
 atm2301psa.pdf

ATM2301PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -2.5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 8.4. Size:2272K  agertech
 atm2306nsa.pdf

ATM2306NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 3.16A DESCRIPTION The ATM2306NSA uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or DC/DC converter . FEATURES V =30V 1Gate 2Source 3Drain DS(V) SOT-23 Plastic Package I =3.16A D R ) 47m @10V

 8.5. Size:2247K  agertech
 atm2300nsa.pdf