ATM2302BNSA MOSFET Datasheet: N-Ch, 20V, 3A. Full specification with pinout and replacement list

ATM2302BNSA Specs and Replacement

Type Designator: ATM2302BNSA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT23

ATM2302BNSA substitution

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ATM2302BNSA datasheet

..1. Size:510K agertech
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ATM2302BNSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3A Features Trench Power LV MOSFET technology High power and current handing capability R ... See More ⇒

7.1. Size:607K agertech
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ATM2302NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3.3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R ... See More ⇒

8.1. Size:759K agertech
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ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -15V Drain Current -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V) 36.4 mohm RDS(ON)( at VGS=-2.5V) 53.0 mohm RDS(ON)( at VGS=-1.8V) 62.0 mohm Applications Battery protection Load switch Power manag... See More ⇒

8.2. Size:497K agertech
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ATM2301PSC P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R ... See More ⇒