ATM2306NSA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ATM2306NSA datasheet

..1. Size:2272K agertech
atm2306nsa.pdf pdf_icon

ATM2306NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 3.16A DESCRIPTION The ATM2306NSA uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or DC/DC converter . FEATURES V =30V 1Gate 2Source 3Drain DS(V) SOT-23 Plastic Package I =3.16A D R ) 47m @10V

8.1. Size:510K agertech
atm2302bnsa.pdf pdf_icon

ATM2302BNSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 20V Drain Current 3A Features Trench Power LV MOSFET technology High power and current handing capability R

8.2. Size:759K agertech
atm2305psa.pdf pdf_icon

ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -15V Drain Current -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V) 36.4 mohm RDS(ON)( at VGS=-2.5V) 53.0 mohm RDS(ON)( at VGS=-1.8V) 62.0 mohm Applications Battery protection Load switch Power manag

8.3. Size:497K agertech
atm2301psc.pdf pdf_icon

ATM2301PSC P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -20V Drain Current -3A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R