ATM2306NSA - Даташиты. Аналоги. Основные параметры

ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V

ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR

ATM2305PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: -15V Drain Current: -5.6A Features Trench FET Power MOSFET Excellent RDS(on) and Low Gate Charge RDS(ON)( at VGS=-4.5V)36.4 mohm RDS(ON)( at VGS=-2.5V)53.0 mohm RDS(ON)( at VGS=-1.8V)62.0 mohm Applications Battery protection Load switch Power manag

ATM2301PSCP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -3AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

ATM2302NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3.3AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R