ATM2306NSA - параметры транзистора MOSFET, его аналоги, datasheet

ATM2306NSA Datasheet (PDF)

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ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V

8.1. Size:510K agertech
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ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR

8.2. Size:445K agertech
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ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R

9.1. Size:997K agertech
atm2312nsa.pdf pdf_icon

ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d

Другие MOSFET... AP8205 , AP8205A , AP83T03K , AP8810 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA , 4N60 , ATM2312NSA , ATM2601PSG , ATM2N65TE , ATM2N65TF , ATM3400ANSA , ATM3404NSA , ATM4N65TE , ATM7002KNSA .