ATM3400ANSA Todos los transistores

 ..1. Size:961K  agertech
 atm3400ansa.pdf

ATM3400ANSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 5.8A FEATURES SOT-23 Trench FET Power MOSFET R

 7.1. Size:642K  agertech
 atm3400nsa.pdf

ATM3400NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 5.8A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 8.1. Size:1388K  agertech
 atm3401psa.pdf

ATM3401PSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -30V Drain Current -4.2A Features Trench FET Power MOSFET Exceptional on-resistance and maximum DC current capability R

 8.2. Size:569K  agertech
 atm3404nsa.pdf

ATM3404NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage 30V Drain Current 5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R

 8.3. Size:649K  agertech
 atm3401apsa.pdf

ATM3401APSA P-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage -30V Drain Current -4.2A DESCRIPTIONS SOT-23 The ATM3401APSA uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. FEATURES Schematic diagram V =

 8.4. Size:1075K  agertech
 atm3407psa.pdf

ATM3407PSA P-Channel Enhancement Mode Field Effect Transistor Feature Description V (V) = -30V DS The ATM3407PSA uses advanced trench technology I = -3.7 A (V =-10V) D GS to provide excellent R , low gate charge and DS(ON) R