ATM3400ANSA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ATM3400ANSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 5.8AFEATURESSOT-23 Trench FET Power MOSFET R

ATM3400NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 30V Drain Current: 5.8A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on)R

ATM3401PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -30V Drain Current: -4.2AFeatures Trench FET Power MOSFET Exceptional on-resistance andmaximum DC current capabilityR

ATM3404NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 30V Drain Current: 5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on)R

ATM3401APSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -30V Drain Current: -4.2ADESCRIPTIONSSOT-23 The ATM3401APSA uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.FEATURESSchematic diagram V =

ATM3407PSAP-Channel Enhancement Mode Field Effect TransistorFeatureDescription V (V) = -30VDSThe ATM3407PSA uses advanced trench technology I = -3.7 A (V =-10V)D GSto provide excellent R , low gate charge andDS(ON) R