AO3481 Todos los transistores

 ..1. Size:818K  aosemi
 ao3481.pdf

AO3481 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3481 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate ID (at VGS=-10V) -4.0A voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 0.1. Size:655K  aosemi
 ao3481c.pdf

AO3481C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V)

 9.1. Size:466K  aosemi
 ao3485c.pdf

AO3485C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 9.2. Size:811K  aosemi
 ao3480.pdf

AO3480 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3480 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 9.3. Size:342K  aosemi
 ao3480c.pdf

AO3480C 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:254K  aosemi
 ao3487.pdf

AO3487 30V P-Channel MOSFET General Description Product Summary VDS -30V The AO3487 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3A device is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.5. Size:818K  aosemi
 ao3485.pdf

AO3485 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)