All MOSFET. AO3481 Datasheet

 

AO3481 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO3481
   Marking Code: CP*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23

 AO3481 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO3481 Datasheet (PDF)

 ..1. Size:818K  aosemi
 ao3481.pdf

AO3481 AO3481

AO348130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO3481 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge and operation gate ID (at VGS=-10V) -4.0Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V)

 9.1. Size:811K  aosemi
 ao3480.pdf

AO3481 AO3481

AO348030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO3480 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 5.7Aextremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V)

 9.2. Size:342K  aosemi
 ao3480c.pdf

AO3481 AO3481

AO3480C30V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=4.5V) 6.2A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:254K  aosemi
 ao3487.pdf

AO3481 AO3481

AO348730V P-Channel MOSFETGeneral Description Product SummaryVDS-30V The AO3487 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. This ID (at VGS=-10V) -4.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=-10V)

 9.4. Size:818K  aosemi
 ao3485.pdf

AO3481 AO3481

AO348520V P-Channel MOSFETGeneral Description Product SummaryVDS -20VThe AO3485 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V)

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PHX6ND50E

 

 
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