AOTF4N60L Todos los transistores

 ..1. Size:651K  aosemi
 aot4n60 aotf4n60 aotf4n60l.pdf

AOT4N60/AOTF4N60/AOTF4N60L 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 & AOTF4N60L have been fabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4A that is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.1. Size:252K  aosemi
 aotf4n60.pdf

AOT4N60/AOTF4N60 600V,4A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:202K  inchange semiconductor
 aotf4n60.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF4N60 FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM

 8.1. Size:185K  aosemi
 aotf4n90.pdf

AOTF4N90 900V,4A N-Channel MOSFET General Description Product Summary VDS 1000V@150 The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 8.2. Size:252K  inchange semiconductor
 aotf4n90.pdf

isc N-Channel MOSFET Transistor AOTF4N90 FEATURES Drain Current I =4A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Static Drain-Source On-Resistance R =3.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a