Справочник MOSFET. AOTF4N60L

 

AOTF4N60L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AOTF4N60L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 28.7 ns
   Cossⓘ - Выходная емкость: 51 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для AOTF4N60L

 

 

AOTF4N60L Datasheet (PDF)

 ..1. Size:651K  aosemi
 aot4n60 aotf4n60 aotf4n60l.pdf

AOTF4N60L AOTF4N60L

AOT4N60/AOTF4N60/AOTF4N60L600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 & AOTF4N60L have beenfabricated using an advanced high voltage MOSFET process ID (at VGS=10V) 4Athat is designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.1. Size:252K  aosemi
 aotf4n60.pdf

AOTF4N60L AOTF4N60L

AOT4N60/AOTF4N60600V,4A N-Channel MOSFETGeneral Description Product Summary VDS700V@150The AOT4N60 & AOTF4N60 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 6.2. Size:202K  inchange semiconductor
 aotf4n60.pdf

AOTF4N60L AOTF4N60L

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF4N60FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

 8.1. Size:185K  aosemi
 aotf4n90.pdf

AOTF4N60L AOTF4N60L

AOTF4N90900V,4A N-Channel MOSFETGeneral Description Product Summary VDS1000V@150The AOTF4N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 8.2. Size:252K  inchange semiconductor
 aotf4n90.pdf

AOTF4N60L AOTF4N60L

isc N-Channel MOSFET Transistor AOTF4N90FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSStatic Drain-Source On-Resistance: R =3.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top