ASDM30N90KQ Todos los transistores

 

ASDM30N90KQ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ASDM30N90KQ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 32 nS
   Cossⓘ - Capacitancia de salida: 307 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO252
 

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ASDM30N90KQ Datasheet (PDF)

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ASDM30N90KQ

ASDM30N90KQ30V N-Channel MOSFETGeneral Features Product Summary Low Gate Charge Advanced Trench TechnologyVDS 30 V Provide Excellent RDS(ON)RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability90ID A Application Load Swtich PWM applications Power management1TO-252N-channelAbsolute Maximum Ratings (TA =25C unless o

 7.1. Size:315K  1
 asdm30n65e-r.pdf pdf_icon

ASDM30N90KQ

ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.

 7.2. Size:348K  1
 asdm30n55e-r.pdf pdf_icon

ASDM30N90KQ

ASDM30N55E30V N-CHANNEL MOSFETFeatureProduct Summary100% EAS GuaranteedVDS 30 VGreen Device AvailableSuper Low Gate ChargeRDS(on),typ VGS=10V 4.8 mExcellent CdV/dt effect declineA55IDAdvanced high cell density Trench technologyApplication Power Management in Inverter Systemtop viewDFN3.3*3.3-8Maximum ratings, at T A=25 C, unless othe

 7.3. Size:315K  ascend
 asdm30n65e.pdf pdf_icon

ASDM30N90KQ

ASDM30N65E30V N-CHANNEL MOSFETProduct SummaryFeaturel Low Gate Charge VDS 30 Vl Green Device Available4.5 mRDS(on),typ VGS=10Vl Super Low Gate ChargeA65IDl Excellent CdV/dt effect declinel Advanced high cell density Trench technologyApplicationsl Power Management in Desktop Computer or DC/DCConverters.l Isolated DC/DC Converters in Telecom and Industrial.

MOSTRAR MÁS

Otros transistores... ASDM2301ZA , ASDM3010 , ASDM3010S , ASDM3020 , ASDM3050 , ASDM3080KQ , ASDM30N55E , ASDM30N65E , STP75NF75 , ASDM30P09ZB , ASDM30P11TD , ASDM30P30CTD , ASDM3400 , ASDM3400ZB , ASDM3401ZB , ASDM3404ZA , ASDM40N52 .

History: ASDM30P11TD | KNY3703A | SM1A40CSK | SM9435 | 1H05 | SFS06R045UNF

 

 
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