CRST065N08N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRST065N08N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 164 W
Voltaje máximo drenador - fuente |Vds|: 85 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 31 nS
Conductancia de drenaje-sustrato (Cd): 790 pF
Resistencia entre drenaje y fuente RDS(on): 0.0065 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET CRST065N08N
CRST065N08N Datasheet (PDF)
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CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
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CRST060N10N, CRSS057N10N() SkyMOS1 N-MOSFET 100V, 5.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
crst037n10n crss035n10n.pdf
CRST037N10N,CRSS035N10N() SkyMOS1 N-MOSFET 100V, 3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) typ3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
crst055n08n crss052n08n.pdf
CRST055N08N, CRSS052N08N() SkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1
crst045n10n crss042n10n.pdf
CRST045N10N, CRSS042N10N() SkyMOS1 N-MOSFET 100V, 3.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
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CRST041N08N, CRSS038N08N() SkyMOS1 N-MOSFET 85V, 3.4m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)3.4m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1
crst085n15n crss082n15n.pdf
CRST085N15N, CRSS082N15N() SkyMOS1 N-MOSFET 150V, 7m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 150V Extremely low on-resistance RDS(on) RDS(on)7m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
crst049n08n crss046n08n.pdf
CRST049N08N, CRSS046N08N() SkyMOS1 N-MOSFET 85V, 4.1m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 4.1m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100%
crst040n10n crss037n10n.pdf
CRST040N10N, CRSS037N10N() SkyMOS1 N-MOSFET 100V, 3.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)3.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
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