CRTD045N03L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRTD045N03L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 101 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 104 nS
Conductancia de drenaje-sustrato (Cd): 467 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET CRTD045N03L
CRTD045N03L Datasheet (PDF)
crtd045n03l.pdf
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crtd030n03l.pdf
CRTD030N03L() Trench N-MOSFET 30V, 2.3m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench MOS technology 30V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID80A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Aval
crtd063n04l.pdf
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Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
