SSF4N80AS Todos los transistores

SSF4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.)c 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

SSF4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

SSF4N60G Main Product Characteristics VDSS 600V RDS(on) 1.85 (typ.) ID 4A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60D Main Product Characteristics VDSS 600V RDS(on) 2.0 (typ.) ID 4A TO-252 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4NS60D Main Product Characteristics VDSS 600V RDS(on) 1.1 (typ.) ID 4A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF4NS60D series MOSFETs is a new te

SSF4N60F Main Product Characteristics VDSS 600V RDS(on) 1.9 (typ.) ID 4A Marking and p in TO-220F Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF4N60 Features Vdss = 600V Extremely high dv/dt capability Id = 4A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 2.3 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF4N60 is a new generation of high voltage N Channel enhancement mode