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12N65TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 12N65TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220F

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12N65TF datasheet

 ..1. Size:490K  chongqing pingwei
 12n65tf.pdf pdf_icon

12N65TF

12N65TF 12 Amps,650 Volts N-CHANNEL MOSFET FEATURE TO-220TF 12A,650V,R =0.75 @V =10V/6A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 12N65TF Drain-Source Voltage V 650 DSS V Gate-Source Voltage V 30 GSS Continu

 8.1. Size:586K  1
 svf12n65f svf12n65t.pdf pdf_icon

12N65TF

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 8.2. Size:1140K  1
 jcs12n65t.pdf pdf_icon

12N65TF

N R N-CHANNEL MOSFET JCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson @Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

 8.3. Size:568K  alfa-mos
 afn12n65t220ft afn12n65t220t.pdf pdf_icon

12N65TF

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

MOSTRAR MÁS

Otros transistores... 11N65GS , 11N65TFS , 12N60B , 12N60H , 12N65 , 12N65F , 12N65B , 12N65H , IRFZ48N , 13N50MF , 150N06Y , 16N65MF , 18N50MF , 20N65NF , 25N06G , 47N60YS , 4N60B .

 

 

 


 
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