12N65TF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 12N65TF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 58 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
   Paquete / Cubierta: TO220F

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12N65TF Datasheet (PDF)

..1. Size:490K chongqing pingwei
12n65tf.pdf

12N65TF12 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220TF 12A,650V,R =0.75@V =10V/6ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT12N65TFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContinu

8.1. Size:586K 1
svf12n65f svf12n65t.pdf

SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

8.2. Size:1140K 1
jcs12n65t.pdf

N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

8.3. Size:568K alfa-mos
afn12n65t220ft afn12n65t220t.pdf

AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

8.4. Size:444K silan
svf12n65t svf12n65f.pdf

SVF12N65T/F 12A650V N 2SVF12N65T/F NMOSF-CellTMVDMOS 1 3

8.5. Size:128K hy
hy12n65t.pdf

HY12N65T / HY12N65FT650V / 12A650V, RDS(ON)=0.8@VGS=10V, ID=6.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G3 3D DS S

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCE0159

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