Справочник MOSFET. 12N65TF


12N65TF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 12N65TF

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 33 W

Предельно допустимое напряжение сток-исток |Uds|: 650 V

Предельно допустимое напряжение затвор-исток |Ugs|: 30 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 12 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 58 nC

Время нарастания (tr): 28 ns

Выходная емкость (Cd): 195 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.75 Ohm

Тип корпуса: TO220F

Аналог (замена) для 12N65TF



12N65TF Datasheet (PDF)

0.1. 12n65tf.pdf Size:490K _chongqing_pingwei


12N65TF12 Amps,650 Volts N-CHANNEL MOSFETFEATURETO-220TF 12A,650V,R =0.75@V =10V/6ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT12N65TFDrain-Source Voltage V 650DSSVGate-Source Voltage V 30GSSContinu

8.1. jcs12n65t.pdf Size:1140K _1


N RN-CHANNEL MOSFETJCS12N65T Package MAIN CHARACTERISTICS ID 12 A VDSS 650 V Rdson@Vgs=10V 0.78 Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS FEA

8.2. svf12n65f svf12n65t.pdf Size:586K _1


SVF12N65T/F_Datasheet 12A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switch

 8.3. afn12n65t220ft afn12n65t220t.pdf Size:568K _alfa-mos


AFN12N65 Alfa-MOS 650V / 12A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN12N65 is an N-channel enhancement mode Power 650V/6A,RDS(ON)=0.8(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-stat

8.4. hy12n65t.pdf Size:128K _hy


HY12N65T / HY12N65FT650V / 12A650V, RDS(ON)=0.8@VGS=10V, ID=6.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G3 3D DS S

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