47N60YS Todos los transistores

 ..1. Size:488K  chongqing pingwei
 47n60ys.pdf

47N60YS 47 Amps,600 Volts N-Channel Super Junction Power MOSFET FEATURE TO-247 47A,600V,R =90m @V =10V/15.6A DS(ON)MAX GS Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum Ratings(T =25 ,unless otherwise noted) C Parameter Symbol UNIT 47N60YS Drain-Source Voltage V 600 DSS V Gate-Source Voltage

 9.1. Size:1062K  fairchild semi
 fch47n60 f133 fca47n60 fca47n60 f109.pdf

December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

 9.2. Size:382K  fairchild semi
 fch47n60f f085.pdf

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75m D Features Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 9.3. Size:381K  fairchild semi
 fch47n60 f085.pdf

November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79m D Features Typ rDS(on) = 64m at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 9.4. Size:599K  fairchild semi
 fch47n60n.pdf

May 2010 SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62m Features Description RDS(on) = 51.5m ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC) process that differentiates it from preceding multi-epi based technologies. By ut

 9.5. Size:295K  fairchild semi
 fch47n60nf.pdf

January 2011 SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65m Features Description RDS(on) = 57.5m (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC) process that differentiates it from preceding multi-epi based techno

 9.6. Size:197K  fairchild semi
 fch47n60f.pdf

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 9.7. Size:191K  fairchild semi
 fca47n60f.pdf

January 2009 TM SuperFET FCA47N60F 600V N-Channel MOSFET, FRFET Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062 balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

 9.8. Size:286K  fairchild semi
 fch47n60 fch47n60 f133.pdf

February TM SuperFET FCH47N60_F133 Features Description 650V @TJ = 150 C SuperFETTM is, Fairchild s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058 balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

 9.9. Size:147K  vishay
 sihw47n60e.pdf

 9.10. Size:170K  vishay
 sihg47n60s.pdf

SiHG47N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation One VDS (V) at TJ max. 650 Low Figure-of-Merit Ron x Qg RoHS RDS(on) max. at 25 C ( ) VGS = 10 V 0.07 COMPLIANT 100 % Avalanche Tested Qg max. (nC) 216 Ultra Low Gate Charge Qgs (nC) 39 Qgd (nC) 57 Ultra Low Ron Configuration Single Compliant to R

 9.11. Size:191K  vishay
 sihg47n60ef.pdf

SiHG47N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650 technology RDS(on) max. at 25 C ( ) VGS = 10 V 0.065 Reduced trr, Qrr, and IRRM Qg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Qgs (nC) 32 Increased r

 9.12. Size:171K  vishay
 sihg47n60aef.pdf

SiHG47N60AEF www.vishay.com Vishay Siliconix EF Series Power MOSFET With Fast Body Diode FEATURES D Low figure-of-merit (FOM) Ron x Qg TO-247AC Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S D S please see www.vishay.com

 9.13. Size:191K  vishay
 sihg47n60e.pdf

SiHG47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.064 Reduced switching and conduction losses Qg max. (nC) 220 Ultra low gate charge (Qg) Qgs (nC) 29 Available Qgd (nC) 57 Avalanche energy ra

 9.14. Size:616K  infineon
 spw47n60cfd.pdf

SPW47N60CFD TM C IMOSTM "9@/; %;+877+;B Features V - R (7H C7GA>FE;A@3CJ ;9 GA>E397 E75 @A>A9J DS(on) max R $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A 46 D R IEC7?7>J >AH C7G7CD7 C75AG7CJ 5 3C97 R / >EC3 >AH 93E7 5 3C97 PG TO247 R IEC7?7 6v /dt C3E76 /d R #;9 B73= 5FCC7@E 53B34;>;EJ R *7C;A6;5 3G3>3@5 7 C3E76 R + F3>;8;76 355AC6;@9 EA % R *4 8C77

 9.15. Size:828K  infineon
 spw47n60c3.pdf

VDS Tjmax G G

 9.16. Size:673K  onsemi
 fch47n60n.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:675K  onsemi
 fch47n60nf.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:408K  onsemi
 fch47n60f.pdf

MOSFET N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCH47N60F Description SUPERFET MOSFET is ON Semiconductor s first generation of www.onsemi.com high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to VDS RDS(ON) MAX ID MAX minimize conduct

 9.19. Size:509K  onsemi
 fch47n60.pdf

 9.20. Size:2138K  onsemi
 fca47n60f.pdf

 9.21. Size:1448K  onsemi
 fca47n60.pdf

 9.22. Size:168K  apt
 apt47n60bc3.pdf

APT47N60BC3 APT47N60SC3 600V 47A 0.070 Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors Ultra low RDS(ON) Low Miller Capacitance D Ultra Low Gate Charge, Qg Avalanche Energy Rated G TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60BC3_SC3

 9.23. Size:402K  apt
 apt47n60bcfg.pdf

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B) COOLMOS Power Semiconductors D3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode (S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

 9.24. Size:579K  fuji
 fmw47n60s1hf.pdf

http //www.fujielectric.com/products/semiconductor/ FMW47N60S1HF FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance TO-247-P2 Low switching loss easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications UPS Server Gate(G) Telecom Source(S)

 9.25. Size:509K  fuji
 fmh47n60s1.pdf

http //www.fujielectric.com/products/semiconductor/ FMH47N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Low on-state resistance 3.2 0.1 TO-3P 15.5max 13 0.2 1.5 0.2 Low switching loss 10 0.2 4.5 0.2 easy to use (more controllabe switching dV/dt by R ) g Drain(D) Applications

 9.26. Size:225K  microsemi
 apt47n60bc3g apt47n60sc3g.pdf

APT47N60BC3(G) APT47N60SC3(G) 600V 47A 0.070 Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package. G RoHS Compliant S MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. Symbol Parameter APT47N60B

 9.27. Size:124K  china
 cs47n60.pdf

CS47N60 N PD TC=25 417 W 3.33 W/ ID VGS=10V,TC=25 47 A IDM 141 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.3 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=30A 0.06 0.07 VGS th VDS=V

 9.28. Size:582K  samwin
 swt47n60k.pdf

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS 600V TO-247 ID 47A High ruggedness Low RDS(ON) (Typ 56m )@VGS=10V RDS(ON) 56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 9.29. Size:1214K  cn super semi
 ssw47n60s ssa47n60s.pdf

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo

 9.30. Size:1289K  cn super semi
 ssw47n60sfd ssa47n60sfd.pdf

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult

 9.31. Size:1052K  cn hmsemi
 hms47n60a.pdf

HMS47N60A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industry s ID A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

 9.32. Size:243K  inchange semiconductor
 spw47n60cfd.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor SPW47N60CFD ISPW47N60CFD FEATURES Static drain-source on-resistance RDS(on) 83m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Peak Current Capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 9.33. Size:244K  inchange semiconductor
 spw47n60c3.pdf

isc N-Channel MOSFET Transistor SPW47N60C3 ISPW47N60C3 FEATURES Static drain-source on-resistance RDS(on) 70m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved Transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

 9.34. Size:213K  inchange semiconductor
 fmw47n60s1hf.pdf

 9.35. Size:376K  inchange semiconductor
 apt47n60bc3.pdf

isc N-Channel MOSFET Transistor APT47N60BC3 FEATURES Drain Current I =47A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.07 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.36. Size:261K  inchange semiconductor
 sihg47n60aef.pdf

isc N-Channel MOSFET Transistor SIHG47N60AEF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

 9.37. Size:258K  inchange semiconductor
 fmh47n60s1fd.pdf

isc N-Channel MOSFET Transistor FMH47N60S1FD FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai