Справочник MOSFET. 47N60YS

 

47N60YS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 47N60YS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 183 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 47 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 88 nC
   trⓘ - Время нарастания: 120.6 ns
   Cossⓘ - Выходная емкость: 2399 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: TO247

 Аналог (замена) для 47N60YS

 

 

47N60YS Datasheet (PDF)

 ..1. Size:488K  chongqing pingwei
47n60ys.pdf

47N60YS
47N60YS

47N60YS47 Amps,600 Volts N-Channel Super Junction Power MOSFETFEATURETO-247 47A,600V,R =90m@V =10V/15.6ADS(ON)MAX GS Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capabilityAbsolute Maximum Ratings(T =25,unless otherwise noted)CParameter Symbol UNIT47N60YSDrain-Source Voltage V 600DSSVGate-Source Voltage

 9.1. Size:1062K  fairchild semi
fch47n60 f133 fca47n60 fca47n60 f109.pdf

47N60YS
47N60YS

December 2008TMSuperFETFCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lowe

 9.2. Size:382K  fairchild semi
fch47n60f f085.pdf

47N60YS
47N60YS

October 2013FCH47N60F_F085N-Channel MOSFET600V, 47A, 75m DFeatures Typ rDS(on) = 66m at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

 9.3. Size:381K  fairchild semi
fch47n60 f085.pdf

47N60YS
47N60YS

November 2013FCH47N60_F085N-Channel MOSFET600V, 47A, 79m DFeatures Typ rDS(on) = 64m at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47AG UIS Capability RoHS CompliantTO-247 Qualified to AEC Q101GSDSDescription SuperFETTM is Fairchilds proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance Forcurren

 9.4. Size:599K  fairchild semi
fch47n60n.pdf

47N60YS
47N60YS

May 2010SupreMOSTMFCH47N60NN-Channel MOSFET 600V, 47A, 62mFeatures Description RDS(on) = 51.5m ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC)process that differentiates it from preceding multi-epi based technologies. By ut

 9.5. Size:295K  fairchild semi
fch47n60nf.pdf

47N60YS
47N60YS

January 2011SupreMOSTMFCH47N60NFN-Channel MOSFET, FRFET 600V, 47A, 65mFeatures Description RDS(on) = 57.5m (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC)process that differentiates it from preceding multi-epi based techno

 9.6. Size:197K  fairchild semi
fch47n60f.pdf

47N60YS
47N60YS

FebruaryTMSuperFETFCH47N60F _F133600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ult

 9.7. Size:191K  fairchild semi
fca47n60f.pdf

47N60YS
47N60YS

January 2009 TMSuperFETFCA47N60F 600V N-Channel MOSFET, FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance.

 9.8. Size:286K  fairchild semi
fch47n60 fch47n60 f133.pdf

47N60YS
47N60YS

FebruaryTMSuperFETFCH47N60_F133 Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

 9.9. Size:147K  vishay
sihw47n60e.pdf

47N60YS
47N60YS

SiHW47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low Input Capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced Switching and Conduction LossesQg max. (nC) 220 Ultra Low Gate Charge (Qg)Qgs (nC) 36 Avalanche Energy Rated (UIS)Qgd (nC) 60

 9.10. Size:170K  vishay
sihg47n60s.pdf

47N60YS
47N60YS

SiHG47N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation OneVDS (V) at TJ max. 650 Low Figure-of-Merit Ron x QgRoHS RDS(on) max. at 25 C () VGS = 10 V 0.07COMPLIANT 100 % Avalanche TestedQg max. (nC) 216 Ultra Low Gate ChargeQgs (nC) 39Qgd (nC) 57 Ultra Low RonConfiguration Single Compliant to R

 9.11. Size:191K  vishay
sihg47n60ef.pdf

47N60YS
47N60YS

SiHG47N60EFwww.vishay.comVishay SiliconixEF Series Power MOSFET with Fast Body DiodeFEATURESPRODUCT SUMMARY Fast body diode MOSFET using E series VDS (V) at TJ max. 650technologyRDS(on) max. at 25 C () VGS = 10 V 0.065 Reduced trr, Qrr, and IRRMQg max. (nC) 228 Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss)Qgs (nC) 32 Increased r

 9.12. Size:171K  vishay
sihg47n60aef.pdf

47N60YS
47N60YS

SiHG47N60AEFwww.vishay.comVishay SiliconixEF Series Power MOSFET With Fast Body DiodeFEATURESD Low figure-of-merit (FOM) Ron x QgTO-247AC Low input capacitance (Ciss) Reduced switching and conduction lossesG Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of complianceSDS please see www.vishay.com

 9.13. Size:191K  vishay
sihg47n60e.pdf

47N60YS
47N60YS

SiHG47N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.064 Reduced switching and conduction lossesQg max. (nC) 220 Ultra low gate charge (Qg)Qgs (nC) 29AvailableQgd (nC) 57 Avalanche energy ra

 9.14. Size:616K  infineon
spw47n60cfd.pdf

47N60YS
47N60YS

SPW47N60CFDTMCIMOSTM "9@/; %;+877+;BFeatures V - R (7H C7GA>FE;A@3CJ :;9: GA>E397 E75:@A>A9JDS(on) maxR $@EC;@D;5 83DE C75AG7CJ 4A6J 6;A67 46 A46DR IEC7?7>J >AH C7G7CD7 C75AG7CJ 5:3C97R / >EC3 >AH 93E7 5:3C97PGTO247R IEC7?7 6v /dt C3E76/dR #;9: B73= 5FCC7@E 53B34;>;EJR *7C;A6;5 3G3>3@5:7 C3E76R + F3>;8;76 355AC6;@9 EA % R *4 8C77

 9.15. Size:828K  infineon
spw47n60c3.pdf

47N60YS
47N60YS

VDS Tjmax G G

 9.16. Size:673K  onsemi
fch47n60n.pdf

47N60YS
47N60YS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:675K  onsemi
fch47n60nf.pdf

47N60YS
47N60YS

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:408K  onsemi
fch47n60f.pdf

47N60YS
47N60YS

MOSFET N-Channel,SUPERFET), FRFET)600 V, 47 A, 73 mWFCH47N60FDescriptionSUPERFET MOSFET is ON Semiconductors first generation ofwww.onsemi.comhigh voltage super-junction (SJ) MOSFET family that is utilizingcharge balance technology for outstanding low on-resistanceand lower gate charge performance. This technology is tailored toVDS RDS(ON) MAX ID MAXminimize conduct

 9.19. Size:509K  onsemi
fch47n60.pdf

47N60YS
47N60YS

MOSFET N ,SUPERFET) II600 V, 47 A, 70 mWFCH47N60 www.onsemi.cnSUPERFET MOSFET ON Semiconductor (SJ) MOSFET VDS RDS(ON) MAX ID MAX dv/dt 600 V 70 mW @ 10 V 47 ASUPERFET MOSFET (PFC) / ATX D 650 V @ TJ = 150C

 9.20. Size:2138K  onsemi
fca47n60f.pdf

47N60YS
47N60YS

201 FCA47N60FN-Channel SuperFET FRFET MOSFET600 V, 47 A, 73 m 650 V @ TJ = 150 CSuperFET MOSFET (SJ) RDS(on) = 62 mMOSFET

 9.21. Size:1448K  onsemi
fca47n60.pdf

47N60YS
47N60YS

2017 9 FCA47N60 N SuperFET MOSFET600 V, 47 A, 70 m 650 V @ TJ = 150CSuperFETMOSFET RDS(on) = 58 m(SJ)MOSFET

 9.22. Size:168K  apt
apt47n60bc3.pdf

47N60YS
47N60YS

APT47N60BC3APT47N60SC3600V 47A 0.070Super Junction MOSFETD3PAKTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 or Surface Mount D3PAK PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT47N60BC3_SC3

 9.23. Size:402K  apt
apt47n60bcfg.pdf

47N60YS
47N60YS

FINAL DATA SHEET 600V 46A 0.083 APT47N60BCF APT47N60SCF APT47N60BCFG* APT47N60SCFG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction FREDFET (B)COOLMOSPower SemiconductorsD3PAK Ultra Low RDS(ON) Intrinsic Fast-Recovery Body Diode(S) Low Miller Capacitance Extreme Low Reverse Recovery Charge Ultra Low Gate Charge, Qg Ideal For Z

 9.24. Size:579K  fuji
fmw47n60s1hf.pdf

47N60YS
47N60YS

http://www.fujielectric.com/products/semiconductor/FMW47N60S1HF FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistanceTO-247-P2Low switching losseasy to use (more controllabe switching dV/dt by R )gDrain(D)ApplicationsUPSServerGate(G)Telecom Source(S)

 9.25. Size:509K  fuji
fmh47n60s1.pdf

47N60YS
47N60YS

http://www.fujielectric.com/products/semiconductor/FMH47N60S1 FUJI POWER MOSFETSuper J-MOS series N-Channel enhancement mode power MOSFETFeatures Outline Drawings [mm] Equivalent circuit schematicLow on-state resistance 3.2 0.1TO-3P15.5max13 0.2 1.50.2Low switching loss10 0.2 4.50.2easy to use (more controllabe switching dV/dt by R )gDrain(D)Applications

 9.26. Size:225K  microsemi
apt47n60bc3g apt47n60sc3g.pdf

47N60YS
47N60YS

APT47N60BC3(G) APT47N60SC3(G)600V 47A 0.070Super Junction MOSFET D3PAK Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Popular TO-247 or Surface Mount D3 package.G RoHS Compliant SMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT47N60B

 9.27. Size:124K  china
cs47n60.pdf

47N60YS

CS47N60 N PD TC=25 417 W 3.33 W/ ID VGS=10V,TC=25 47 A IDM 141 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.3 /W BVDSS VGS=0V,ID=0.25mA 600 V RDS on VGS=10V,ID=30A 0.06 0.07 VGS th VDS=V

 9.28. Size:582K  samwin
swt47n60k.pdf

47N60YS
47N60YS

SW47N60K N-channel Enhanced mode TO-247 MOSFET Features BVDSS : 600V TO-247 ID : 47A High ruggedness Low RDS(ON) (Typ 56m)@VGS=10V RDS(ON) :56m Low Gate Charge (Typ 152nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MO

 9.29. Size:1214K  cn super semi
ssw47n60s ssa47n60s.pdf

47N60YS
47N60YS

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET SS*47N60S Rev. 1.3 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60S/SSA47N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism fo

 9.30. Size:1289K  cn super semi
ssw47n60sfd ssa47n60sfd.pdf

47N60YS
47N60YS

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power MOSFET With Fast-Recovery SS*47N60SFD Rev. 1.5 Jun. 2019 www.supersemi.com.cn March, 2016 SJ-FET SSW47N60SFD/SSA47N60SFD 600V N-Channel MOSFET With Fast-Recovery Description Features SJ-FET is new generation of high voltage MOSFET family that Mult

 9.31. Size:1052K  cn hmsemi
hms47n60a.pdf

47N60YS
47N60YS

HMS47N60AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 600 V VDS@Tjmaxtechnology and design to provide excellent RDS(ON) with low RDS(ON) MAX 70 m gate charge. This super junction MOSFET fits the industrys ID AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

 9.32. Size:243K  inchange semiconductor
spw47n60cfd.pdf

47N60YS
47N60YS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPW47N60CFDISPW47N60CFDFEATURESStatic drain-source on-resistance:RDS(on)83mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Peak Current CapabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

 9.33. Size:244K  inchange semiconductor
spw47n60c3.pdf

47N60YS
47N60YS

isc N-Channel MOSFET Transistor SPW47N60C3ISPW47N60C3FEATURESStatic drain-source on-resistance:RDS(on)70mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved TransconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 9.34. Size:213K  inchange semiconductor
fmw47n60s1hf.pdf

47N60YS
47N60YS

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FMW47N60S1HFFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 9.35. Size:376K  inchange semiconductor
apt47n60bc3.pdf

47N60YS
47N60YS

isc N-Channel MOSFET Transistor APT47N60BC3FEATURESDrain Current I =47A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.07(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 9.36. Size:261K  inchange semiconductor
sihg47n60aef.pdf

47N60YS
47N60YS

isc N-Channel MOSFET Transistor SIHG47N60AEFFEATURESWith TO-247 packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 9.37. Size:258K  inchange semiconductor
fmh47n60s1fd.pdf

47N60YS
47N60YS

isc N-Channel MOSFET Transistor FMH47N60S1FDFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drai

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