4N60B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4N60B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 70 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 45 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de 4N60B MOSFET
- Selecciónⓘ de transistores por parámetros
4N60B datasheet
0.1. Size:1019K 1
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf 
N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
0.2. Size:644K fairchild semi
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to
0.3. Size:888K fairchild semi
ssp4n60b sss4n60b.pdf
SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switchi
0.4. Size:163K ixys
ixgt64n60b3.pdf
Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30
0.5. Size:133K ixys
ixgh24n50bu1 ixgh24n60bu1.pdf
VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT 500 V 48 A 2.3 V 80 ns IXGH24N50BU1 with Diode 600 V 48 A 2.5 V 80 ns IXGH24N60BU1 Combi Pack Preliminary data TO-247 AD Symbol Test Conditions Maximum Ratings 24N50 24N60 C (TAB) VCES TJ = 25 C to 150 C 500 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C E VGES Continuous 20 V VGEM Transient 30 V G = Gate, C = Collector, E
0.6. Size:100K ixys
ixsh24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
0.7. Size:100K ixys
ixsh24n60b.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
0.8. Size:137K ixys
ixgh24n60b.pdf
IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C48 A C E IC90 TC = 90 C24 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 96 A
0.9. Size:180K ixys
ixgx64n60b3d1.pdf
VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 VCE(sat) 1.8V Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC110
0.10. Size:100K ixys
ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
0.11. Size:100K ixys
ixst24n60b.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
0.12. Size:180K ixys
ixgk64n60b3d1.pdf
VCES = 600V GenX3TM 600V IGBT IXGK64N60B3D1 IC110 = 64A with Diode IXGX64N60B3D1 VCE(sat) 1.8V Medium speed low Vsat PT tfi(typ) = 88ns IGBTs 5-40 kHz switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V G VGES Continuous 20 V C (TAB) E VGEM Transient 30 V IC110
0.13. Size:68K ixys
ixsp24n60b.pdf
IXSP 24N60B VCES = 600 V High Speed IGBT IC25 = 48 A VCE(sat) = 2.5 V Short Circuit SOA Capability tfi typ = 170 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXSP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V C (TAB) G C VGEM Transient 30 V E IC25 TC = 25 C48 A IC90 TC = 90 C24 A G = Gate
0.14. Size:102K ixys
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V (TAB) VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC
0.15. Size:118K ixys
ixgh24n50b ixgh24n60b.pdf
VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT IXGH24N50B 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns IXGH24N60B Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C48 A G = Gate, C = Collector, IC90 TC = 9
0.16. Size:36K ixys
ixgh34n60b2.pdf
Advance Technical Data VCES = 600 V IXGH 34N60B2 HiPerFASTTM IGBT IC25 = 70 A VCE(sat)
0.17. Size:163K ixys
ixgh64n60b3.pdf
Preliminary Technical Information IXGH64N60B3 VCES = 600V GenX3TM 600V IGBT IXGT64N60B3 IC110 = 64A Medium speed low Vsat PT VCE(sat) 1.8V IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TC = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30
0.18. Size:267K jiangsu
cjd04n60b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for
0.19. Size:656K ark-micro
ftp04n60b fta04n60b.pdf
FTP04N60B/FTA04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 2.8 3.6A Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information
0.20. Size:529K ark-micro
ftu04n60b ftd04n60b.pdf
FTU04N60B/FTD04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.8 3.6A Low ON Resistance Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Inf
0.21. Size:1045K jilin sino
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf
N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su
0.23. Size:1259K jilin sino
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low
0.24. Size:842K magnachip
mdd4n60brh mdi4n60bth.pdf
MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0 General Description Features The MDD/I4N60B uses advanced Magnachip s MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
0.25. Size:943K magnachip
mdf4n60bth.pdf
MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DS MagnaChip s MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GS state resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GS quality. Applications These devices are suitable device
0.26. Size:532K winsemi
wfd4n60b.pdf
WFD4N60B WFD4N60B WFD4N60B WFD4N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4A,600V.R (Max 2.4 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General D
0.27. Size:917K samwin
sw4n60b.pdf
SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS 600V Features ID 4A High ruggedness RDS(ON) 2.5 RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typ 11nC) 1 Improved dv/dt Capability 1 2 2 1 3 2 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce
0.28. Size:4499K first semi
fir4n60bpg.pdf
FIR4N60BPG N-Channel Super Junction Power MOSFET-Y PIN Connection TO-251 General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. G D S Features New
0.29. Size:1004K jiejie micro
jmpf4n60bj.pdf
JMPF4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON)
0.30. Size:1046K jiejie micro
jmpc4n60bj.pdf
JMPC4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON)
0.31. Size:1066K jiejie micro
jmpk4n60bj.pdf
JMPK4N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 4A Load Switch RDS(ON)
Otros transistores... 12N65TF
, 13N50MF
, 150N06Y
, 16N65MF
, 18N50MF
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.
History: IRF7807VTRPBF-1
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