4N60B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 4N60B
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 70 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 70 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
Тип корпуса: TO263
4N60B Datasheet (PDF)
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf
N RN-CHANNEL MOSFETJCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS RdsonVgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS
ssi4n60b ssi4n60b ssw4n60b.pdf
November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to
ssp4n60b sss4n60b.pdf
SSP4N60B/SSS4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to Fast switchi
ixgt64n60b3.pdf
Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30
ixgh24n50bu1 ixgh24n60bu1.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBT500 V 48 A 2.3 V 80 nsIXGH24N50BU1with Diode600 V 48 A 2.5 V 80 nsIXGH24N60BU1Combi PackPreliminary dataTO-247 ADSymbol Test Conditions Maximum Ratings24N50 24N60C (TAB)VCES TJ = 25 C to 150 C 500 600 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate, C = Collector,E
ixsh24n60bd1.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixsh24n60b.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixgh24n60b.pdf
IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 A
ixgx64n60b3d1.pdf
VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110
ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixst24n60b.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixgk64n60b3d1.pdf
VCES = 600VGenX3TM 600V IGBTIXGK64N60B3D1IC110 = 64Awith DiodeIXGX64N60B3D1VCE(sat) 1.8VMedium speed low Vsat PT tfi(typ) = 88nsIGBTs 5-40 kHz switchingTO-264 (IXGK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VGVGES Continuous 20 V C (TAB)EVGEM Transient 30 VIC110
ixsp24n60b.pdf
IXSP 24N60B VCES = 600 VHigh Speed IGBTIC25 = 48 AVCE(sat) = 2.5 VShort Circuit SOA Capabilitytfi typ = 170 nsPreliminary Data SheetSymbol Test Conditions Maximum Ratings TO-220 (IXSP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VC (TAB)GCVGEM Transient 30 VEIC25 TC = 25C48 AIC90 TC = 90C24 AG = Gate
ixsh24n60b ixsh24n60bd1 ixst24n60b ixst24n60bd1.pdf
IXSH 24N60B VCES = 600 VHigh Speed IGBTIXST 24N60B IC25 = 48 AIXSH 24N60BD1 VCE(sat) = 2.5 VShort Circuit SOA CapabilityIXST 24N60BD1 tfi typ = 170 ns(D1)TO-247 AD (IXSH)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 V(TAB)VCGR TJ = 25C to 150C; RGE = 1 M 600 VGCVGES Continuous 20 VEVGEM Transient 30 VTO-268 (D3) ( IXST)IC25 TC
ixgh24n50b ixgh24n60b.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBTIXGH24N50B 500 V 48 A 2.3 V 80 ns600 V 48 A 2.5 V 80 nsIXGH24N60BPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD24N50 24N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C48 AG = Gate, C = Collector,IC90 TC = 9
ixgh34n60b2.pdf
Advance Technical DataVCES = 600 VIXGH 34N60B2HiPerFASTTM IGBTIC25 = 70 AVCE(sat)
ixgh64n60b3.pdf
Preliminary Technical InformationIXGH64N60B3 VCES = 600VGenX3TM 600V IGBTIXGT64N60B3IC110 = 64AMedium speed low Vsat PTVCE(sat) 1.8VIGBTs for 5 - 40kHz switchingtfi(typ) = 88nsSymbol Test Conditions Maximum RatingsTO-247 (IXGH)VCES TC = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30
cjd04n60b.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET TO-251S General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a drain-to-source diode wigh fast recovery time.Desighed 1. GATE for
ftp04n60b fta04n60b.pdf
FTP04N60B/FTA04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 2.8 3.6A Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information
ftu04n60b ftd04n60b.pdf
FTU04N60B/FTD04N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features 600V 2.8 3.6A Low ON Resistance Low Gate Charge (typical 14.7nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Inf
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf
N RN-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 RdsonVgs=10VQg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su
jcs4n60v jcs4n60c jcs4n60f jcs4n60r jcs4n60b.pdf
N RN-CHANNEL MOSFET JCS4N60C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson Typ 2.0 Vgs=10V Max 2.5 Qg-typ 17.5nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low
mdd4n60brh mdi4n60bth.pdf
MDD4N60 / MDI4N60B N-Channel MOSFET 600V, 3.5A, 2.0General Description Features The MDD/I4N60B uses advanced Magnachips MOSFET VDS = 600V Technology, which provides low on-state resistance, high ID = 3.5A @ VGS = 10V switching performance and excellent quality. RDS(ON) 2.0 @ VGS = 10V MDD/I4N60B is suitable device for SMPS, HID and general Applications
mdf4n60bth.pdf
MDF4N60B N-Channel MOSFET 600V, 4.6A, 2.0 General Description Features These N-channel MOSFET are produced using advanced V = 600V DSMagnaChips MOSFET Technology, which provides low on- I = 4.6A @ V = 10V D GSstate resistance, high switching performance and excellent R 2.0 @ V = 10V DS(ON) GSquality. Applications These devices are suitable device
wfd4n60b.pdf
WFD4N60BWFD4N60BWFD4N60BWFD4N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4A,600V.R (Max 2.4)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General D
sw4n60b.pdf
SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS : 600V Features ID : 4A High ruggedness RDS(ON) : 2.5 RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typ 11nC) 1 Improved dv/dt Capability 1 2 2 1 3 2 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce
fir4n60bpg.pdf
FIR4N60BPG N-Channel Super Junction Power MOSFET-YPIN Connection TO-251General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.G D SFeatures New
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918