4N65F Todos los transistores

 

4N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4N65F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220F

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4N65F Datasheet (PDF)

 ..1. Size:868K  chongqing pingwei
4n65 4n65f 4n65b 4n65h 4n65g 4n65d.pdf

4N65F 4N65F

 0.1. Size:382K  kec
kf4n65fm.pdf

4N65F 4N65F

KF4N65FMSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description CAThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERS_A 10.16 0.2+correction and switching mode power suppli

 0.2. Size:831K  jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf

4N65F 4N65F

N RN-CHANNEL MOSFETJCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

 0.3. Size:1447K  jilin sino
jcs4n65f jcs4n65v jcs4n65r jcs4n65b jcs4n65m jcs4n65mf.pdf

4N65F 4N65F

R JCS4N65E JCS4N65E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_max 2.5 Vgs=10V Qg-typ 11.9nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low gate

 0.4. Size:779K  jilin sino
jcs4n65f-c-r-v.pdf

4N65F 4N65F

N lSX:_W:WHe^vfSO{RN-CHANNEL MOSFETJCS4N65C \ Package ;NSpe MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS RdsonVgs=10V 2.5 9nC Qg APPLICATIONS (u High frequency switching

 0.5. Size:1598K  jilin sino
jcs4n65vb jcs4n65rb jcs4n65bb jcs4n65sb jcs4n65cb jcs4n65fb.pdf

4N65F 4N65F

N RN-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 650 V RdsonVgs=10V 2.4 -Max Qg-Typ 16.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UP

 0.6. Size:1866K  jilin sino
jcs4n65v jcs4n65r jcs4n65c jcs4n65f jcs4n65b jcs4n65m jcs4n65mf.pdf

4N65F 4N65F

RJCS4N65C JCS4N65C MAIN CHARACTERISTICS Package ID 4.0 A VDSS 650 V Rdson_Typ 2.1 Vgs=1Max 2.6 0V Qg-typ 14nC APPLICATIONS High frequency switchingmode power supply Electronic ballastLED LED power supply FEATURES Low g

 0.7. Size:393K  cystek
mtn4n65f3.pdf

4N65F 4N65F

Spec. No. : C797F3 Issued Date : 2015.03.06 CYStech Electronics Corp.Revised Date : Page No. : 1/ 11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65F3 ID : 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter

 0.8. Size:504K  cystek
mtn4n65fp.pdf

4N65F 4N65F

Spec. No. : C797FP Issued Date : 2010.06.09 CYStech Electronics Corp. Revised Date : 2014.07.28 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS : 650V RDS(ON) : 3 (typ.) MTN4N65FP ID : 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-

 0.9. Size:437K  crhj
cr4n65fa9k.pdf

4N65F 4N65F

Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi

 0.10. Size:263K  crhj
cs4n65f a9r.pdf

4N65F 4N65F

Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.11. Size:130K  jdsemi
cm4n65f.pdf

4N65F 4N65F

RCM4N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS 1 LDE 2 1 2 3

 0.12. Size:376K  silan
svs14n65fjd2 svs14n65fd2 svs14n65td2 svs14n65sd2 svs14n65sd2tr.pdf

4N65F 4N65F

SVS14N65FJ(F)(T)(S)D2 14A, 650V MOS 21SVS14N65FJ/F/T/SD2 N MOSFET 31TO-263-2L MOS 31. 2. 3.SVS14N65FJ/

 0.13. Size:449K  silan
svf4n65f svf4n65mj svf4n65m svf4n65dtr.pdf

4N65F 4N65F

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

 0.14. Size:318K  silan
svsp14n65fjhe2.pdf

4N65F 4N65F

SVSP14N65FJHE2 14A, 650V MOS 2SVSP14N65FJHE2 N MOSFET MOS 1 3SVSP14N65FJHE2 /

 0.15. Size:697K  silan
svf4n65f svf4n65m svf4n65mj svf4n65d.pdf

4N65F 4N65F

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

 0.16. Size:376K  silan
svsp14n65fjdd2 svsp14n65td2 svsp14n65kd2.pdf

4N65F 4N65F

SVSP14N65FJD (T)KD2 14A, 650V MOS 2SVSP14N65FJD/T/KD2 N MOSFET 1 MOS 123 3TO-262-3LSVSP14N65FJD/T/KD2

 0.17. Size:427K  silan
svf4n65t svf4n65f svf4n65mj svf4n65m svf4n65m svf4n65d svf4n65dtr svf4n65k.pdf

4N65F 4N65F

SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS

 0.18. Size:354K  silan
svd4n65t svd4n65f.pdf

4N65F 4N65F

SVD4N65T/SVD4N65F4A 650V N 2SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 11 22 33TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3@VGS=10V dv/dt

 0.19. Size:620K  silan
svf4n65t svf4n65f svf4n65m svf4n65mj svf4n65d svf4n65k.pdf

4N65F 4N65F

SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13

 0.20. Size:171K  lzg
cs4n65f.pdf

4N65F 4N65F

BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

 0.21. Size:2200K  slkor
sl4n65f sl4n65i sl4n65d.pdf

4N65F 4N65F

SL4N65N-CHANNEL MOSFET MAIN CHARACTERISTICS4AID650VVDSS2.6R V =10VDS(ON) GS18nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low

 0.22. Size:315K  ubiq
qm14n65f.pdf

4N65F 4N65F

QM14N65F 1 2011-07-22 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14Amost of the synchronous buck converterapplications . Applications The QM14N65F meet the RoHS an

 0.23. Size:319K  ubiq
qm04n65f1.pdf

4N65F 4N65F

QM04N65F1 1 2011-11-25 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM04N65F1 is the highest performance N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 2.6 4Afor most of the synchronous buck converter applications . Applications The QM04N65F1 meet the RoHS an

 0.24. Size:317K  ubiq
qm04n65f.pdf

4N65F 4N65F

QM04N65F 1 2011-03-14 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM04N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4Amost of the synchronous buck converterapplications . Applications The QM04N65F meet the RoHS and G

 0.25. Size:234K  wuxi china
cs4n65fa9hd.pdf

4N65F 4N65F

Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 0.26. Size:703K  convert
cs4n65f cs4n65p cs4n65u cs4n65d.pdf

4N65F 4N65F

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N65F,CS4N65P,CS4N65U,CS4N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N65F TO-220F

 0.27. Size:2174K  first semi
fir14n65fg.pdf

4N65F 4N65F

FIR14N65FG14A, 650V N-CHANNEL MOSFET-EGENERAL DESCRIPTION PIN Connection TO-220FThe FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

 0.28. Size:3702K  first semi
fir4n65fg.pdf

4N65F 4N65F

FIR4N65FGAdvanced N-Ch Power MOSFET-HPIN Connection TO-220FGeneral Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system gSchematic di

 0.29. Size:788K  cn si
sif4n65f.pdf

4N65F 4N65F

 0.30. Size:3672K  winsok
wsr4n65f.pdf

4N65F 4N65F

WSR4N65F N-Ch MOSFETGeneral Description Product SummeryThe WSR4N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 2.6 4Aof the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed

 0.31. Size:462K  cn hmsemi
hm4n65 hm4n65f.pdf

4N65F 4N65F

HM4N65 / HM4N65FHM4N65 / HM4N65F 650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 15nC)This advanced technology has been espe cially tailored to High ruggednessminimize o n-state r esistance, pr ovide superior switch

 0.32. Size:1056K  cn marching-power
mpva4n65f mpvu4n65f mpvd4n65f.pdf

4N65F 4N65F

MPVX4N65F SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 650V, ID=4A l Switch Mode Power Supply (SMPS)l RDS(on) : 2.8(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGTO-220F TO-251 TO-252SOrdering InformationType NO. Marking Pack

 0.33. Size:199K  inchange semiconductor
fir4n65f.pdf

4N65F 4N65F

INCHANGE Semiconductorisc N-Channel Mosfet Transistor FIR4N65FFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingSimple Drive RequirementsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationD

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