4N65F Specs and Replacement
Type Designator: 4N65F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 57 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ -
Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
4N65F datasheet
0.1. Size:382K kec
kf4n65fm.pdf 
KF4N65FM SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description C A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS _ A 10.16 0.2 + correction and switching mode power suppli... See More ⇒
0.2. Size:831K jilin sino
jcs4n65vb jcs4n65rb jcs4n65cb jcs4n65fb.pdf
N R N-CHANNEL MOSFET JCS4N65B Package MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson 2.5 @Vgs=10V 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒
0.7. Size:393K cystek
mtn4n65f3.pdf
Spec. No. C797F3 Issued Date 2015.03.06 CYStech Electronics Corp. Revised Date Page No. 1/ 11 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65F3 ID 4A Features Low On Resistance Simple Drive Requirement Fast Switching Characteristic Pb-free lead plating and RoHS compliant package Applications Adapter ... See More ⇒
0.8. Size:504K cystek
mtn4n65fp.pdf
Spec. No. C797FP Issued Date 2010.06.09 CYStech Electronics Corp. Revised Date 2014.07.28 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 650V RDS(ON) 3 (typ.) MTN4N65FP ID 4A Description The MTN4N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-... See More ⇒
0.9. Size:437K crhj
cr4n65fa9k.pdf
Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi... See More ⇒
0.10. Size:263K crhj
cs4n65f a9r.pdf
Silicon N-Channel Power MOSFET R CS4N65F A9R General Description VDSS 650 V CS4N65F A9R, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power... See More ⇒
0.18. Size:354K silan
svd4n65t svd4n65f.pdf
SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt ... See More ⇒
0.20. Size:171K lzg
cs4n65f.pdf
BRF4N65(CS4N65F) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25 ... See More ⇒
0.21. Size:2200K slkor
sl4n65f sl4n65i sl4n65d.pdf
SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low ... See More ⇒
0.22. Size:315K ubiq
qm14n65f.pdf
QM14N65F 1 2011-07-22 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM14N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 0.65 14A most of the synchronous buck converter applications . Applications The QM14N65F meet the RoHS an... See More ⇒
0.23. Size:319K ubiq
qm04n65f1.pdf
QM04N65F1 1 2011-11-25 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65F1 is the highest performance N-ch MOSFETs with extreme high cell density , BVDSS RDSON ID which provide excellent RDSON and gate charge 650V 2.6 4A for most of the synchronous buck converter applications . Applications The QM04N65F1 meet the RoHS an... See More ⇒
0.24. Size:317K ubiq
qm04n65f.pdf
QM04N65F 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65F is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65F meet the RoHS and G... See More ⇒
0.25. Size:234K wuxi china
cs4n65fa9hd.pdf
Silicon N-Channel Power MOSFET R CS4N65F A9HD General Description VDSS 650 V CS4N65F A9HD, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe... See More ⇒
0.26. Size:703K convert
cs4n65f cs4n65p cs4n65u cs4n65d.pdf
nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N65F,CS4N65P,CS4N65U,CS4N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N65F TO-220F... See More ⇒
0.27. Size:2174K first semi
fir14n65fg.pdf
FIR14N65FG 14A, 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-220F The FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide ... See More ⇒
0.28. Size:3702K first semi
fir4n65fg.pdf
FIR4N65FG Advanced N-Ch Power MOSFET-H PIN Connection TO-220F General Description FIR4N65FG , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching G D S performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system g Schematic di... See More ⇒
0.30. Size:3672K winsok
wsr4n65f.pdf
WSR4N65F N-Ch MOSFET General Description Product Summery The WSR4N65F is the highest performance trench RDSON ID BVDSS N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most 650V 2.6 4A of the synchronous buck converter applications . Applications The WSR7N65F meet the RoHS and Green Product requirement , 100% EAS guaranteed ... See More ⇒
0.31. Size:462K cn hmsemi
hm4n65 hm4n65f.pdf
HM4N65 / HM4N65F HM4N65 / HM4N65F 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using SL semi s 4.0A, 650V, RDS(on) = 3.0 @VGS = 10 V advanced planar stripe DMOS technology. Low gate charge ( typical 15nC) This advanced technology has been espe cially tailored to High ruggedness minimize o n-state r esistance, pr ovide superior switch... See More ⇒
0.32. Size:1056K cn marching-power
mpva4n65f mpvu4n65f mpvd4n65f.pdf
MPVX4N65F Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 650V, ID=4A l Switch Mode Power Supply (SMPS) l RDS(on) 2.8 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G TO-220F TO-251 TO-252 S Ordering Information Type NO. Marking Pack... See More ⇒
0.33. Size:199K inchange semiconductor
fir4n65f.pdf
INCHANGE Semiconductor isc N-Channel Mosfet Transistor FIR4N65F FEATURES Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 3.0 (Max) DS(on) Avalanche Energy Specified Fast Switching Simple Drive Requirements Minimum Lot-to-Lot variations for robust device performance and reliable operation D... See More ⇒
0.34. Size:1818K cn apm
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒
0.35. Size:1220K cn apm
ap4n65f ap4n65p.pdf
AP4N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP4N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒
Detailed specifications: 150N06Y, 16N65MF, 18N50MF, 20N65NF, 25N06G, 47N60YS, 4N60B, 4N60H, MMIS60R580P, 4N65B, 4N65H, 4N65G, 4N65D, 4N65TF, 50N06B, 50N06H, 50N06D
Keywords - 4N65F MOSFET specs
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