EMB12P03G Todos los transistores

 

EMB12P03G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: EMB12P03G

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 453 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: SOP8

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EMB12P03G datasheet

 ..1. Size:180K  emc
 emb12p03g.pdf pdf_icon

EMB12P03G

EMB12P03G P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.)(VGS= 10V) 10m ID 13A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Vo

 6.1. Size:191K  1
 emb12p03v.pdf pdf_icon

EMB12P03G

EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS

 6.2. Size:191K  emc
 emb12p03v.pdf pdf_icon

EMB12P03G

EMB12P03V P Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 12m ID 21A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS

 9.1. Size:192K  1
 emb12n04v.pdf pdf_icon

EMB12P03G

EMB12N04V N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 40V RDSON (MAX.) 12.8m ID 18A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS

MOSTRAR MÁS

Otros transistores... DM10N65C-2 , DM12N65C , DM12N65C-F , DM12N65C-2 , EMB03N03HR , EMB09N03V , EMB09P03V , EMB12N04V , IRLB4132 , EMB12P03V , EMB17A03G , EMB17C03G , EMB20N03V , EMB20P03G , EMB22A04G , EMBA5P06J , EMF02P02H .

History: IPP200N15N3 | S2N7002K | NCE60R360F | SGM3055 | HCFL65R380 | 2SK3922-01

 

 

 

 

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