SSF6N90A Todos los transistores

 

SSF6N90A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF6N90A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 900 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 1560 pF

Resistencia drenaje-fuente RDS(on): 2.3 Ohm

Empaquetado / Estuche: TO3PF

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SSF6N90A Datasheet (PDF)

5.1. ssf6ns65uf.pdf Size:453K _silikron

SSF6N90A
SSF6N90A

 SSF6NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.78Ω (typ.) ID 6A ① Marking and pin TO-220F Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS65UF series MOSFETs is a new technology, whic

5.2. ssf6n80a6.pdf Size:423K _silikron

SSF6N90A
SSF6N90A

 SSF6N80A6 Main Product Characteristics: VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A Marking and p in TO-262 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

 5.3. ssf6n40d.pdf Size:555K _silikron

SSF6N90A
SSF6N90A

 SSF6N40D Main Product Characteristics: VDSS 400V RDS(on) 0.85Ω (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

5.4. ssf6ns70ugx.pdf Size:407K _silikron

SSF6N90A
SSF6N90A

 SSF6NS70UGX Main Product Characteristics: VDSS 700V RDS(on) 1.08Ω (typ.) ID 6A ① IPAK-NX Marking and Pi n Schematic Diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS70UGX series MOSFETs is a new technology, whi

 5.5. ssf6n70g.pdf Size:451K _silikron

SSF6N90A
SSF6N90A

 SSF6N70G Main Product Characteristics: VDSS 700V RDS(on) 1.49Ω (typ.) ID 6A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

5.6. ssf6n60g.pdf Size:443K _silikron

SSF6N90A
SSF6N90A

 SSF6N60G Main Product Characteristics: VDSS 600V RDS(on) 1.32Ω (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

5.7. ssf6n80g.pdf Size:478K _silikron

SSF6N90A
SSF6N90A

 SSF6N80G Main Product Characteristics: VDSS 800V RDS(on) 2.35Ω (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

5.8. ssf6n80f.pdf Size:532K _silikron

SSF6N90A
SSF6N90A

 SSF6N80F Main Product Characteristics: VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body reco

5.9. ssf6ns70g-d-f.pdf Size:543K _silikron

SSF6N90A
SSF6N90A

 SSF6NS70G/D/F Main Product Characteristics: VDSS 700V RDS(on) 1.2Ω (typ.) ID 5.2A ① 251 TO-252 TO- TO-220F Schematic diagram SSF6NS70G SSF6NS70D SSF6NS70F Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS70G/D/F

5.10. ssf6ns70ugs.pdf Size:450K _silikron

SSF6N90A
SSF6N90A

 SSF6NS70UGS Main Product Characteristics: VDSS 700V RDS(on) 1.1Ω (typ.) ID 6A ① TO-251S Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS70UGS series MOSFETs is a new technology, whic

5.11. ssf6ns70ud.pdf Size:465K _silikron

SSF6N90A
SSF6N90A

 SSF6NS70UD Main Product Characteristics: VDSS 700V RDS(on) 0.95Ω (typ.) ID 6A ① TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS70UD series MOSFETs is a new technology,

5.12. ssf6ns70ug.pdf Size:457K _silikron

SSF6N90A
SSF6N90A

 SSF6NS70UG Main Product Characteristics: VDSS 700V RDS(on) 0.95Ω (typ.) ID 6A ① TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF6NS70UG series MOSFETs is a new technology,

5.13. ssf6n70gm.pdf Size:411K _silikron

SSF6N90A
SSF6N90A

 SSF6N70GM Main Product Characteristics: VDSS 700V RDS(on) 1.49Ω (typ.) ID 6A IPAKM-S2 Marking and p in S che ma ti c di ag ra m (Details in page6) Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and

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