AP9977GM-HF Todos los transistores

 

AP9977GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9977GM-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SO8

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AP9977GM-HF datasheet

 ..1. Size:181K  ape
ap9977gm-hf.pdf pdf_icon

AP9977GM-HF

AP9977GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 100m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9977 series are from Advanced Power innovated design and D2 D1 silicon process tech

 6.1. Size:212K  ape
ap9977gm.pdf pdf_icon

AP9977GM-HF

AP9977GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 Single Drive Requirement RDS(ON) 100m D2 D1 Surface Mount Package ID 3.3A D1 G2 S2 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des

 7.1. Size:207K  ape
ap9977gjv.pdf pdf_icon

AP9977GM-HF

AP9977GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11A G RoHS Compliant & Halogen-Free S Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

 7.2. Size:101K  ape
ap9977gh-hf ap9977gj-hf.pdf pdf_icon

AP9977GM-HF

AP9977GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d

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