AP9977GM-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP9977GM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SO8
Búsqueda de reemplazo de AP9977GM-HF MOSFET
- Selecciónⓘ de transistores por parámetros
AP9977GM-HF datasheet
ap9977gm-hf.pdf
AP9977GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 D2 D1 Simple Drive Requirement RDS(ON) 100m D1 Surface Mount Package ID 3.3A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP9977 series are from Advanced Power innovated design and D2 D1 silicon process tech
ap9977gm.pdf
AP9977GM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 60V D2 Single Drive Requirement RDS(ON) 100m D2 D1 Surface Mount Package ID 3.3A D1 G2 S2 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device des
ap9977gjv.pdf
AP9977GJV Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge D BVDSS 60V Simple Drive Requirement RDS(ON) 100m Fast Switching Performance ID 11A G RoHS Compliant & Halogen-Free S Description AP9977 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible
ap9977gh-hf ap9977gj-hf.pdf
AP9977GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 60V D Single Drive Requirement RDS(ON) 100m Surface Mount Package ID 11A G RoHS Compliant S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized d
Otros transistores... AP2307GN , AP2311GN , AP4034GYT-HF-3 , AP4410M , AP4435GM , AP72T03GH-HF , AP9579GP , AP9963GP , TK10A60D , AP9985GM-HF , AP9T18GH-HF , FBM75N68P , FBM75N68B , MTA50P01SN3 , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 .
History: IRFZ48RSP | SGSP330 | WM02P06H
History: IRFZ48RSP | SGSP330 | WM02P06H
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