SSF7N60A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSF7N60A datasheet

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November 2001 SSF7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast s

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SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage N Channel enhancement mode

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ssf7n60f.pdf pdf_icon

SSF7N60F Main Product Characteristics VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Otros transistores... SSF4N80AS , SSF4N90AS , SSF5N80A , SSF5N90A , SSF6N70A , SSF6N80A , SSF6N90A , SSF70N10A , 60N06 , SSF7N80A , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A .