MTB1D0N03RH8 Todos los transistores

 

MTB1D0N03RH8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTB1D0N03RH8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20.6 nS

Cossⓘ - Capacitancia de salida: 4552 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.001 Ohm

Encapsulados: DFN5X6

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MTB1D0N03RH8 datasheet

 ..1. Size:840K  1
mtb1d0n03rh8.pdf pdf_icon

MTB1D0N03RH8

Spec. No. C012H8 Issued Date 2018.07.19 CYStech Electronics Corp. Revised Date 2019.01.03 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25 C(silicon limit) 200A ID@VGS=10V, TC=25 C(package limit) 84A ID@VGS=10V, TA=25 C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.

 ..2. Size:840K  cystek
mtb1d0n03rh8.pdf pdf_icon

MTB1D0N03RH8

Spec. No. C012H8 Issued Date 2018.07.19 CYStech Electronics Corp. Revised Date 2019.01.03 Page No. 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25 C(silicon limit) 200A ID@VGS=10V, TC=25 C(package limit) 84A ID@VGS=10V, TA=25 C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.

 9.1. Size:420K  cystek
mtb1d7n03ath8.pdf pdf_icon

MTB1D0N03RH8

Spec. No. C948H8 Issued Date 2014.06.06 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8 BVDSS 30V ID @VGS=10V 90A RDS(ON)@VGS=10V, ID=30A 1.5 m (typ) Features RDS(ON)@VGS=4.5V, ID=20A 2.1 m (typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic

 9.2. Size:356K  cystek
mtb1d7n03e3.pdf pdf_icon

MTB1D0N03RH8

Spec. No. C948E3 Issued Date 2014.03.05 CYStech Electronics Corp. Revised Date Page No. 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30V MTB1D7N03E3 ID @VGS=10V 203A 2m RDSON(TYP) @ VGS=10V, ID=30A 2.6m RDSON(TYP) @ VGS=4.5V, ID=20A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant pac

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