MTB1D0N03RH8 - параметры транзистора MOSFET, его аналоги, datasheet

MTB1D0N03RH8 Datasheet (PDF)

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Spec. No. : C012H8 Issued Date : 2018.07.19 CYStech Electronics Corp. Revised Date : 2019.01.03 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFET MTB1D0N03RH8 BVDSS 30V ID@VGS=10V, TC=25C(silicon limit) 200A ID@VGS=10V, TC=25C(package limit) 84A ID@VGS=10V, TA=25C 34.5A Features 0.7m VGS=10V, ID=20A Single Drive Requirement RDSON(TYP) 1.

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Spec. No. : C948H8 Issued Date : 2014.06.06 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB1D7N03ATH8BVDSS 30VID @VGS=10V 90ARDS(ON)@VGS=10V, ID=30A 1.5 m(typ)Features RDS(ON)@VGS=4.5V, ID=20A 2.1 m(typ) Single Drive Requirement Low On-resistance Fast Switching Characteristic Dynamic

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Spec. No. : C948E3 Issued Date : 2014.03.05 CYStech Electronics Corp.Revised Date : Page No. : 1/8 N-Channel Enhancement Mode Power MOSFET BVDSS 30VMTB1D7N03E3 ID @VGS=10V 203A2m RDSON(TYP) @ VGS=10V, ID=30A 2.6m RDSON(TYP) @ VGS=4.5V, ID=20A Features Low Gate Charge Simple Drive Requirement Fast Switching Characteristic RoHS compliant pac

Другие MOSFET... AP9T18GH-HF , FBM75N68P , FBM75N68B , MTA50P01SN3 , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 , MTB095N10KRN3 , IRFZ46N , MTB20N06KJ3 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 .