MTB20N06KJ3 Todos los transistores

 

MTB20N06KJ3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTB20N06KJ3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17.6 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0168 Ohm
   Paquete / Cubierta: TO252
 

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MTB20N06KJ3 Datasheet (PDF)

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 mtb20n06kj3.pdf pdf_icon

MTB20N06KJ3

Spec. No. : C103J3 Issued Date : 2015.12.31 CYStech Electronics Corp. Revised Date : 2018.04.12 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06KJ3 ID@VGS=10V, TC=25C 38A ID@VGS=10V, TA=25C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m(typ)Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m(typ)RDS(ON)@VGS=4V, ID=4A 17.2 m(typ) Low On Resistance

 6.1. Size:312K  cystek
 mtb20n06j3.pdf pdf_icon

MTB20N06KJ3

Spec. No. : C925J3 Issued Date : 2013.08.13 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFETBVDSS 60VMTB20N06J3 ID 42ARDS(ON)@VGS=10V, ID=20A 14.6 m(typ)RDS(ON)@VGS=4.5V, ID=20A 16.7 m(typ)Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic

 7.1. Size:366K  cystek
 mtb20n04j3.pdf pdf_icon

MTB20N06KJ3

Spec. No. : C978J3 Issued Date : 2015.01.05 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40VMTB20N04J3 ID@VGS=10V, TC=25C 23A ID@VGS=10V, TC=100C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package

 7.2. Size:367K  cystek
 mtb20n03aq8.pdf pdf_icon

MTB20N06KJ3

Spec. No. : C737Q8 Issued Date : 2009.04.29 CYStech Electronics Corp.Revised Date : 2012.03.01 Page No. : 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30VMTB20N03AQ8 ID 10.2ARDS(ON)@VGS=10V, ID=9A 13.6 m(typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m(typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best

MOSTRAR MÁS

Otros transistores... FBM75N68P , FBM75N68B , MTA50P01SN3 , MTB028N10QNCQ8 , MTB030N10RQ8 , MTB095N10KRL3 , MTB095N10KRN3 , MTB1D0N03RH8 , 7N60 , MTB280N15L3 , MTB340N11N6 , MTC3586BDFA6 , MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , MTE030N15RQ8 .

History: FDB0300N1007L

 

 
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