MTB20N06KJ3 PDF and Equivalents Search

 

MTB20N06KJ3 Specs and Replacement

Type Designator: MTB20N06KJ3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0168 Ohm

Package: TO252

MTB20N06KJ3 substitution

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MTB20N06KJ3 datasheet

 ..1. Size:498K  cystek
 mtb20n06kj3.pdf pdf_icon

MTB20N06KJ3

Spec. No. C103J3 Issued Date 2015.12.31 CYStech Electronics Corp. Revised Date 2018.04.12 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06KJ3 ID@VGS=10V, TC=25 C 38A ID@VGS=10V, TA=25 C 8.3A RDS(ON)@VGS=10V, ID=8A 13.4 m (typ) Features RDS(ON)@VGS=4.5V, ID=6A 15.9 m (typ) RDS(ON)@VGS=4V, ID=4A 17.2 m (typ) Low On Resistance ... See More ⇒

 6.1. Size:312K  cystek
 mtb20n06j3.pdf pdf_icon

MTB20N06KJ3

Spec. No. C925J3 Issued Date 2013.08.13 CYStech Electronics Corp. Revised Date 2013.12.30 Page No. 1/ 9 N-Channel Enhancement Mode Power MOSFET BVDSS 60V MTB20N06J3 ID 42A RDS(ON)@VGS=10V, ID=20A 14.6 m (typ) RDS(ON)@VGS=4.5V, ID=20A 16.7 m (typ) Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ... See More ⇒

 7.1. Size:366K  cystek
 mtb20n04j3.pdf pdf_icon

MTB20N06KJ3

Spec. No. C978J3 Issued Date 2015.01.05 CYStech Electronics Corp. Revised Date Page No. 1/9 N -Channel Enhancement Mode Power MOSFET BVDSS 40V MTB20N04J3 ID@VGS=10V, TC=25 C 23A ID@VGS=10V, TC=100 C 16.3A VGS=10V, ID=10A 17.5m RDSON(TYP) VGS=4.5V, ID=8A 20.8m Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package ... See More ⇒

 7.2. Size:367K  cystek
 mtb20n03aq8.pdf pdf_icon

MTB20N06KJ3

Spec. No. C737Q8 Issued Date 2009.04.29 CYStech Electronics Corp. Revised Date 2012.03.01 Page No. 1/9 N-Channel LOGIC Level Enhancement Mode Power MOSFET BVDSS 30V MTB20N03AQ8 ID 10.2A RDS(ON)@VGS=10V, ID=9A 13.6 m (typ) RDS(ON)@VGS=4.5V, ID=7A 23.6 m (typ) Description The MTB20N03AQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best ... See More ⇒

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Detailed specifications: FBM75N68P, FBM75N68B, MTA50P01SN3, MTB028N10QNCQ8, MTB030N10RQ8, MTB095N10KRL3, MTB095N10KRN3, MTB1D0N03RH8, AO3407, MTB280N15L3, MTB340N11N6, MTC3586BDFA6, MTC3587DL8, MTC3588BDFA6, MTC3588N6, MTC6601N6, MTE030N15RQ8

Keywords - MTB20N06KJ3 MOSFET specs

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