MTEF1P15AV8 Todos los transistores

 

MTEF1P15AV8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MTEF1P15AV8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 5.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16.6 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm

Encapsulados: DFN3X3

 Búsqueda de reemplazo de MTEF1P15AV8 MOSFET

- Selecciónⓘ de transistores por parámetros

 

MTEF1P15AV8 datasheet

 ..1. Size:690K  1
mtef1p15av8.pdf pdf_icon

MTEF1P15AV8

Spec. No. C896V8 Issued Date 2015.12.16 CYStech Electronics Corp. Revised Date 2018.07.24 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25 C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 ..2. Size:690K  cystek
mtef1p15av8.pdf pdf_icon

MTEF1P15AV8

Spec. No. C896V8 Issued Date 2015.12.16 CYStech Electronics Corp. Revised Date 2018.07.24 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15AV8 -5.4A @ VGS=-10V, TC=25 C ID 0.52 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.56 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb

 6.1. Size:374K  cystek
mtef1p15v8.pdf pdf_icon

MTEF1P15AV8

Spec. No. C896V8 Issued Date 2014.05.05 CYStech Electronics Corp. Revised Date Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15V8 ID -4A @ VGS=-10V, TC=25 C 0.64 @ VGS=-10V, ID=-1.4A RDSON(Typ) 0.7 @ VGS=-6V, ID=-1A Features Simple drive requirement Low on-resistance Fast switching speed Pb-free lead plating a

 6.2. Size:633K  cystek
mtef1p15q8.pdf pdf_icon

MTEF1P15AV8

Spec. No. C896Q8 Issued Date 2013.07.05 CYStech Electronics Corp. Revised Date 2018.10.24 Page No. 1/9 P-Channel Enhancement Mode Power MOSFET BVDSS -150V MTEF1P15Q8 ID@TA=25 C, VGS=-10V -1.6A RDSON@VGS=-10V, ID=-1.6A 650m (typ) RDSON@VGS=-6V, ID=-1A 700m (typ) Features Simple drive requirement Low on-resistance Fast switching speed Pb

Otros transistores... MTC3587DL8 , MTC3588BDFA6 , MTC3588N6 , MTC6601N6 , MTE030N15RQ8 , MTE050N15BRH8 , MTE050N15BRV8 , MTE65N20H8 , IRFB31N20D , MTNK6N3 , MTP4435AQ8 , C2M065W030 , C2M065W060 , C2M065W200 , C2M090BG070 , C2M090W035 , C2M090W070 .

History: TPCP8202 | NTMD5838NL | AP70T03AJ | SVT035R5NMJ | SLP240C03D | AO3401MI-MS | SE30150

 

 

 

 

↑ Back to Top
.