CS18N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS18N50F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 98 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 53.4 nC
trⓘ - Tiempo de subida: 36.5 nS
Cossⓘ - Capacitancia de salida: 228 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.34 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET CS18N50F
CS18N50F Datasheet (PDF)
cs18n50f cs18n50p cs18n50v cs18n50w.pdf
CS18N50F,CS18N50P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N50V,CS18N50W500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F
cs18n50f cs18n50p cs18n50v.pdf
nvertCS18N50F,CS18N50P,CS18N50VSuzhou Convert Semiconductor Co ., Ltd.500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F TO-220F CS1
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf
N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
jcs18n50wh.pdf
N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi
jcs18n50we jcs18n50abe.pdf
N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: RF1S40N10SM
History: RF1S40N10SM
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918