CS18N50P Todos los transistores

 

CS18N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS18N50P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 208 W
   Voltaje máximo drenador - fuente |Vds|: 500 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 18 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 53.4 nC
   Tiempo de subida (tr): 36.5 nS
   Conductancia de drenaje-sustrato (Cd): 228 pF
   Resistencia entre drenaje y fuente RDS(on): 0.34 Ohm
   Paquete / Cubierta: TO-220

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CS18N50P Datasheet (PDF)

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cs18n50f cs18n50p cs18n50v cs18n50w.pdf

CS18N50P
CS18N50P

CS18N50F,CS18N50P,nvertSuzhou Convert Semiconductor Co ., Ltd.CS18N50V,CS18N50W500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F

 ..2. Size:872K  convert
cs18n50f cs18n50p cs18n50v.pdf

CS18N50P
CS18N50P

nvertCS18N50F,CS18N50P,CS18N50VSuzhou Convert Semiconductor Co ., Ltd.500V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS18N50F TO-220F CS1

 7.1. Size:948K  jilin sino
jcs18n50wh.pdf

CS18N50P
CS18N50P

N lSX:_W:WHe^vfSO{ N- CHANNEL MOSFET RJCS18N50WH ;NSpe MAIN CHARACTERISTICS \ Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 50nC APPLICATIONS (u l High efficiency swi

 7.2. Size:1873K  jilin sino
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf

CS18N50P
CS18N50P

N N- CHANNEL MOSFET RJCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC Eoss@Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 7.3. Size:1269K  jilin sino
jcs18n50we jcs18n50abe.pdf

CS18N50P
CS18N50P

N N- CHANNEL MOSFET RJCS18N50WE ABE MAIN CHARACTERISTICS Package ID 19 A VDSS 500 V Rdson-max@Vgs=10V 0.27 Qg-typ 48.7nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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