CS18N50P MOSFET Datasheet: N-Ch, 500V, 18A. Full specification with pinout and replacement list

CS18N50P Specs and Replacement

   Type Designator: CS18N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 36.5 nS
   Cossⓘ - Output Capacitance: 228 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
   Package: TO-220

CS18N50P substitution

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CS18N50P datasheet

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CS18N50F,CS18N50P, nvert Suzhou Convert Semiconductor Co ., Ltd. CS18N50V,CS18N50W 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F ... See More ⇒

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nvert CS18N50F,CS18N50P,CS18N50V Suzhou Convert Semiconductor Co ., Ltd. 500V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS18N50F TO-220F CS1... See More ⇒

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7.2. Size:1873K jilin sino
jcs18n50be jcs18n50se jcs18n50ce jcs18n50fe.pdf pdf_icon

N N- CHANNEL MOSFET R JCS18N50E MAIN CHARACTERISTICS Package ID 18 A VDSS 500 V Rdson-max @Vgs=10V 0.27 Qg-typ 48.7nC Eoss @Vdss=400V 5.84mJ APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒