CS20N65P Todos los transistores

 

CS20N65P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CS20N65P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48.4 nS
   Cossⓘ - Capacitancia de salida: 249.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: TO-220
 

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CS20N65P Datasheet (PDF)

 ..1. Size:859K  convert
 cs20n65f cs20n65p cs20n65v cs20n65w.pdf pdf_icon

CS20N65P

nvertCS20N65F,CS20N65P,CS20N65V,CS20N65WSuzhou Convert Semiconductor Co ., Ltd.650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and PackageInformationDevice Package MarkingCS20N65F T

 7.1. Size:806K  jilin sino
 jcs20n65fei.pdf pdf_icon

CS20N65P

N RN-CHANNEL MOSFETJCS20N65EI Package MAIN CHARACTERISTICS ID 20A VDSS 650V Rdson-max0.42 Vgs=10V Qg-Typ 64.6nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power

 7.2. Size:826K  jilin sino
 jcs20n65fh jcs20n65wh.pdf pdf_icon

CS20N65P

N RN-CHANNEL MOSFET JCS20N65H MAIN CHARACTERISTICS Package ID 20A VDSS 650 V Rdson-max 0.5 @Vgs=10V Qg-typ 45nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply

 7.3. Size:431K  crhj
 cs20n65f a9h.pdf pdf_icon

CS20N65P

Silicon N-Channel Power MOSFET R CS20N65F A9H VDSS 650 V General Description ID 20 A CS20N65F A9H, the silicon N-channel Enhanced PD(TC=25) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.37 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

MOSTRAR MÁS

Otros transistores... CS18N70V , CS1N70SU , CS1N70SF , CS20N60F , CS20N60P , CS20N60W , CS20N60V , CS20N65F , IRFB3607 , CS20N65V , CS20N65W , CS2N100F , CS2N100P , CS2N100U , CS2N100D , CS2N100LF , CS2N50DF .

History: AP2614GY-HF | IRFP264NPBF | PNMT60V02E

 

 
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