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SSH10N70A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSH10N70A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO3P

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SSH10N70A Datasheet (PDF)

 6.1. Size:294K  samsung
ssh10n70 ssh10n80.pdf

SSH10N70A
SSH10N70A

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 8.1. Size:256K  1
ssh10n80a.pdf

SSH10N70A
SSH10N70A

N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT

 8.2. Size:211K  samsung
ssh10n80a.pdf

SSH10N70A
SSH10N70A

SSH10N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 8.3. Size:205K  samsung
ssh10n90a.pdf

SSH10N70A
SSH10N70A

SSH10N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 8.4. Size:923K  samsung
ssh10n60a.pdf

SSH10N70A
SSH10N70A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 8.5. Size:263K  semelab
ssh10n80.pdf

SSH10N70A
SSH10N70A

Otros transistores... SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , IRF540 , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 .

 

 
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