SSH10N70A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSH10N70A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Paquete / Cubierta: TO3P
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SSH10N70A Datasheet (PDF)
ssh10n70 ssh10n80.pdf
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ssh10n80a.pdf
N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT
ssh10n80a.pdf
SSH10N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha
ssh10n90a.pdf
SSH10N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char
ssh10n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value
Otros transistores... SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , IRF540 , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918