Справочник MOSFET. SSH10N70A

 

SSH10N70A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSH10N70A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для SSH10N70A

 

 

SSH10N70A Datasheet (PDF)

 6.1. Size:294K  samsung
ssh10n70 ssh10n80.pdf

SSH10N70A
SSH10N70A

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 8.1. Size:256K  1
ssh10n80a.pdf

SSH10N70A
SSH10N70A

N-CHANNEL POWER MOSFET SSH10N80AFEATURESBVDSS = 800V Avalanche Rugged TechnologyRDS(ON) = 0.95 Rugged Gate Oxide TechnologyID = 10A Lower Input Capacitance Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current: 25A (Max.) @ VDS = 800V Lower RDS(ON): 0.746 (Typ.)1231. Gate 2. Drain 3. SourceABSOLUTE MAXIMUM RAT

 8.2. Size:211K  samsung
ssh10n80a.pdf

SSH10N70A
SSH10N70A

SSH10N80AAdvanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 0.95 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 700V Low RDS(ON) : 1.552 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Cha

 8.3. Size:205K  samsung
ssh10n90a.pdf

SSH10N70A
SSH10N70A

SSH10N90AAdvanced Power MOSFETFEATURESBVDSS = 900 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaTO-3P Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 0.938 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 8.4. Size:923K  samsung
ssh10n60a.pdf

SSH10N70A
SSH10N70A

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 10 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

 8.5. Size:263K  semelab
ssh10n80.pdf

SSH10N70A
SSH10N70A

Другие MOSFET... SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , SSF9N80A , SSF9N90A , SSH10N60A , SSH10N70 , IRF540N , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A , SSH15N60 , SSH15N60A , SSH17N60A , SSH20N45 .

 

 
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