CS8N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CS8N65D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 107 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 37 nC
   Tiempo de subida (tr): 10 nS
   Conductancia de drenaje-sustrato (Cd): 106 pF
   Resistencia entre drenaje y fuente RDS(on): 1.15 Ohm
   Paquete / Cubierta: TO-252

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CS8N65D Datasheet (PDF)

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cs8n65f cs8n65p cs8n65d cs8n65f-b.pdf

CS8N65F,CS8N65P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N65D,CS8N65F-B650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO

8.1. Size:1248K jilin sino
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

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cs8n65f a9h.pdf

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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cs8n65 a0h.pdf

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

8.4. Size:347K crhj
cs8n65 a8h.pdf

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

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cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf

CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS

8.9. Size:648K convert
cs8n65f cs8n65p.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N65F,CS8N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO-220F CS8N65FCS8N65P

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