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CS8N65D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: CS8N65D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 107 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 37 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 106 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.15 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для CS8N65D

 

 

CS8N65D Datasheet (PDF)

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 cs8n65f cs8n65p cs8n65d cs8n65f-b.pdf

CS8N65D CS8N65D

CS8N65F,CS8N65P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N65D,CS8N65F-B650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO

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 jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf

CS8N65D CS8N65D

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

 8.2. Size:354K  crhj
 cs8n65f a9h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 8.3. Size:355K  crhj
 cs8n65 a0h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.4. Size:347K  crhj
 cs8n65 a8h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.5. Size:355K  wuxi china
 cs8n65a0h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 8.6. Size:347K  wuxi china
 cs8n65a8h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 8.7. Size:234K  wuxi china
 cs8n65fa9h.pdf

CS8N65D CS8N65D

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

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 cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf

CS8N65D CS8N65D

CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS

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 cs8n65f cs8n65p.pdf

CS8N65D CS8N65D

nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N65F,CS8N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO-220F CS8N65FCS8N65P

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