CTD02N007 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTD02N007

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 196 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO-252

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CTD02N007 datasheet

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CTD02N007

nvert CTD02N007 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (

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CTD02N007

nvert CTD02N004 Suzhou Convert Semiconductor Co ., Ltd. 25V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters with S

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CTD02N007

nvert CTD02N4P8 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl

Otros transistores... CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, CTD02N004, 2SK3568, CTD02N4P8, CTD03N003, CTD03N005, CTD03N10P5, CTD03N3P3, CTD03N4P3, CTD03N4P6, CTD03N8P5