CTD02N007 Datasheet and Replacement
Type Designator: CTD02N007
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 196 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO-252
CTD02N007 substitution
CTD02N007 Datasheet (PDF)
ctd02n007.pdf
nvertCTD02N007Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (
ctd02n004.pdf
nvertCTD02N004Suzhou Convert Semiconductor Co ., Ltd.25V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters withS
ctd02n4p8.pdf
nvertCTD02N4P8Suzhou Convert Semiconductor Co ., Ltd.20V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl
Datasheet: CST30N10U , CST30N10D , CST30N10P , CST9N20LF , CST9N20LP , CTB06N005 , CTP06N005 , CTD02N004 , 2SK3568 , CTD02N4P8 , CTD03N003 , CTD03N005 , CTD03N10P5 , CTD03N3P3 , CTD03N4P3 , CTD03N4P6 , CTD03N8P5 .
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