CTD02N007 Specs and Replacement

Type Designator: CTD02N007

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 196 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO-252

CTD02N007 substitution

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CTD02N007 datasheet

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 ctd02n007.pdf pdf_icon

CTD02N007

nvert CTD02N007 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switch Hard switched and high frequency circuits Uninterruptible Power Supply (... See More ⇒

 6.1. Size:790K  convert
 ctd02n004.pdf pdf_icon

CTD02N007

nvert CTD02N004 Suzhou Convert Semiconductor Co ., Ltd. 25V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Power Motor Controls High Frequency Isolated DC-DC Converters with S... See More ⇒

 8.1. Size:586K  convert
 ctd02n4p8.pdf pdf_icon

CTD02N007

nvert CTD02N4P8 Suzhou Convert Semiconductor Co ., Ltd. 20V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Load Switching Hard switched and high frequence circuits Uninterruptible power suppl... See More ⇒

Detailed specifications: CST30N10U, CST30N10D, CST30N10P, CST9N20LF, CST9N20LP, CTB06N005, CTP06N005, CTD02N004, 2SK3568, CTD02N4P8, CTD03N003, CTD03N005, CTD03N10P5, CTD03N3P3, CTD03N4P3, CTD03N4P6, CTD03N8P5

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