CTD06N017 Todos los transistores

 

CTD06N017 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CTD06N017
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.1 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: TO-252
 

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CTD06N017 Datasheet (PDF)

 ..1. Size:868K  convert
 ctd06n017.pdf pdf_icon

CTD06N017

nvertCTD06N017Suzhou Convert Semiconductor Co ., Ltd.60V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and

 7.1. Size:576K  convert
 ctd06n030.pdf pdf_icon

CTD06N017

nvertCTD06N030Suzhou Convert Semiconductor Co ., Ltd.60V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and

 7.2. Size:612K  convert
 ctd06n070.pdf pdf_icon

CTD06N017

nvertCTD06N070Suzhou Convert Semiconductor Co ., Ltd.60V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched and

 8.1. Size:823K  convert
 ctd06n7p5 ctb06n7p5 ctp06n7p5.pdf pdf_icon

CTD06N017

nvertSuzhou Convert Semiconductor Co ., Ltd.CTD06N7P5, CTB06N7P5,CTP06N7P568V N-Channel Trench MOSFETFEATURESTrench Power DTMOS technologyLow RDS(ON)Low Gate ChargeOptimized for fast-switching applicationsAPPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and IndustrialDevice Marking and Package Inf

MOSTRAR MÁS

Otros transistores... CTD03N4P6 , CTD03N8P5 , CTD03P030 , CTD03P7P5 , CTD04N004 , CTD04N11P5 , CTD04N5P5 , CTD04N7P5 , IRF520 , CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , CTD10N100 , CTD10P650 .

History: AM20N10-250D | HFS12N60U | PA102FDG | PSMN9R0-30LL | SVF10N65CA | BUZ71S2 | AON7424

 

 
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