CTD10N100 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTD10N100

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25.8 nS

Cossⓘ - Capacitancia de salida: 55 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO-252

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CTD10N100 datasheet

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 ctd10n100.pdf pdf_icon

CTD10N100

nvert CTD10N100 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Power switching application LED TV Backlight Module LCD Application System Device

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 ctd10n033.pdf pdf_icon

CTD10N100

nvert CTD10N033 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

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 ctd10p650.pdf pdf_icon

CTD10N100

nvert CTD10P650 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

Otros transistores... CTD04N7P5, CTD06N017, CTD06N030, CTD06N070, CTD06N7P5, CTB06N7P5, CTP06N7P5, CTD10N033, IRFZ46N, CTD10P650, CTN04N7P5, CTN04PN035, CTP03N2P7, CTP06N6P8, CTP10N066, CTP10P095, CTQ06N085