CTD10N100 Datasheet and Replacement
Type Designator: CTD10N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 25.8 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-252
CTD10N100 substitution
CTD10N100 Datasheet (PDF)
ctd10n100.pdf
nvertCTD10N100Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application LED TV Backlight Module LCD Application SystemDevice
ctd10n033.pdf
nvertCTD10N033Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctd10p650.pdf
nvertCTD10P650Suzhou Convert Semiconductor Co ., Ltd.100V P-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
Datasheet: CTD04N7P5 , CTD06N017 , CTD06N030 , CTD06N070 , CTD06N7P5 , CTB06N7P5 , CTP06N7P5 , CTD10N033 , STP65NF06 , CTD10P650 , CTN04N7P5 , CTN04PN035 , CTP03N2P7 , CTP06N6P8 , CTP10N066 , CTP10P095 , CTQ06N085 .
History: UTT30P06G-TA3-T | AOD66643 | AP4511GH | IRFH8330PBF | AP9990GMT | OSG65R580DTF | DH8004D
Keywords - CTD10N100 MOSFET datasheet
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History: UTT30P06G-TA3-T | AOD66643 | AP4511GH | IRFH8330PBF | AP9990GMT | OSG65R580DTF | DH8004D
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