CTD10N100 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD10N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.9 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11.9 nC
trⓘ - Rise Time: 25.8 nS
Cossⓘ - Output Capacitance: 55 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-252
CTD10N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD10N100 Datasheet (PDF)
ctd10n100.pdf
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ctd10n033.pdf
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ctd10p650.pdf
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