CTD10P650 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CTD10P650  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.8 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO-252

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CTD10P650 datasheet

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CTD10P650

nvert CTD10P650 Suzhou Convert Semiconductor Co ., Ltd. 100V P-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

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CTD10P650

nvert CTD10N033 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an

 9.2. Size:573K  convert
 ctd10n100.pdf pdf_icon

CTD10P650

nvert CTD10N100 Suzhou Convert Semiconductor Co ., Ltd. 100V N-Channel Trench MOSFET FEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology APPLICATIONS Power switching application LED TV Backlight Module LCD Application System Device

Otros transistores... CTD06N017, CTD06N030, CTD06N070, CTD06N7P5, CTB06N7P5, CTP06N7P5, CTD10N033, CTD10N100, FTP08N06A, CTN04N7P5, CTN04PN035, CTP03N2P7, CTP06N6P8, CTP10N066, CTP10P095, CTQ06N085, CTS03P015