CTD10P650 MOSFET. Datasheet pdf. Equivalent
Type Designator: CTD10P650
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 4.5 nC
trⓘ - Rise Time: 6.8 nS
Cossⓘ - Output Capacitance: 29 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO-252
CTD10P650 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CTD10P650 Datasheet (PDF)
ctd10p650.pdf
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ctd10n033.pdf
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nvertCTD10N033Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Hard switched an
ctd10n100.pdf
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nvertCTD10N100Suzhou Convert Semiconductor Co ., Ltd.100V N-Channel Trench MOSFETFEATURES Super Low Gate Charge 100% EAS Guaranteed RoHS compliant Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technologyAPPLICATIONS Power switching application LED TV Backlight Module LCD Application SystemDevice
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