CJA03N10S Todos los transistores

 

CJA03N10S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CJA03N10S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 38 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
   Paquete / Cubierta: SOT89

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CJA03N10S Datasheet (PDF)

 ..1. Size:2234K  jiangsu
cja03n10s.pdf

CJA03N10S
CJA03N10S

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10S N-Channel MOSFETID V(BR)DSS RDS(on)MAX SOT-89-3L 100V3A140m@ 10VDESCRIPTION 1. GATE The CJA03N10S uses advanced trench technology and design to 2. DRAIN provide excellent RDS(ON) with low gate charge .This device is suitable for 3. SOURCE use in a wide variety of app

 6.1. Size:699K  jiangsu
cja03n10.pdf

CJA03N10S
CJA03N10S

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate MOSFETS CJA03N10 N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-89-3L 100V3A140m@ 10V1. GATE 2. DRAIN DESCRIPTION 3. SOURCE The CJA03N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of

 6.2. Size:153K  comchip
cja03n10-hf.pdf

CJA03N10S
CJA03N10S

MOSFETCJA03N10-HFN-ChannelRoHS DeviceHalogen Free 1 : Gate SOT-89-3LFeatures2 : Drain3 : Source0.181(4.60) -Special process technology for high ESD capability.0.173(4.40)0.061(1.55) -High density cell design for extremely low RDS(ON).REF. -Good stability and uniformity with high EAS.0.102(2.60) 0.167(4.25) -Excellent package for good heat dissipation. 0.091(2.3

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