CJAC100SN08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CJAC100SN08

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 142 W

Tensión drenaje-fuente |Vds|: 80 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 100 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 2.5 V

Carga de compuerta (Qg): 102 nC

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 1870 pF

Resistencia drenaje-fuente RDS(on): 0.0039 Ohm

Empaquetado / Estuche: PDFNWB5X6-8L

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CJAC100SN08 Datasheet (PDF)

0.1. cjac100sn08.pdf Size:3049K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.9m@10V80V100A4.3m@4.5VDESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte

7.1. cjac100p03.pdf Size:2466K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

8.1. cjac10h02.pdf Size:5128K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE

8.2. cjac10th10.pdf Size:1073K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP

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