CJAC110SN10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJAC110SN10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 192 W
Tensión drenaje-fuente |Vds|: 100 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 110 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 66.5 nC
Tiempo de elevación (tr): 7.5 nS
Conductancia de drenaje-sustrato (Cd): 794 pF
Resistencia drenaje-fuente RDS(on): 0.005 Ohm
Empaquetado / Estuche: PDFNWB5X6-8L
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CJAC110SN10 Datasheet (PDF)
0.1. cjac110sn10.pdf 
Size:1662K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m@10V 110ADESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig
7.1. cjac110n03.pdf Size:2101K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.8m@10V30 V110A3.5m@4.5VDESCRIPTION FEATURES
9.1. cjac10h02.pdf Size:5128K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB56-8L 2.0m@4.5V20 V100A2.4m@2.5VDESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE
9.2. cjac150n03.pdf Size:4609K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 1.6m@10V30 V150A2.1m@4.5VDESCRIPTION 15 FEATURES
9.3. cjac10th10.pdf Size:1073K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 8m@10V100V 100A10m@4.5VDESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP
9.4. cjac100sn08.pdf Size:3049K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.9m@10V80V100A4.3m@4.5VDESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte
9.5. cjac100p03.pdf Size:2466K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L 2.3m@-10V-30 V-100A3.4m@-4.5VDESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU
9.6. cjac13th06.pdf Size:1292K _jiangsu
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 3m@10V60V 130A4.5m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
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