CJAC13TH06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CJAC13TH06 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 140 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.3 nS
Cossⓘ - Capacitancia de salida: 1635 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: PQFNWB5X6-8L
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CJAC13TH06 datasheet
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cjac13th06.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID PDFNWB5 6-8L 2.2m @10V 60V 130A 3.0m @4.5V DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE
..2. Size:1292K jiangsu
cjac13th06.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 3m @10V 60V 130A 4.5m @4.5V DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES
9.1. Size:2395K 1
cjac110sn10a.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(onTYP ID 3.4m @10V 100V 110A 4.5m @4.5V DESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA
9.2. Size:1763K 1
cjac100sn08u.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L-B 80 V 100A 3.0m @10V DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, pr
9.3. Size:2101K 1
cjac110n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES
9.4. Size:1662K 1
cjac110sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig
9.5. Size:2466K 1
cjac100p03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU
9.6. Size:4609K 1
cjac150n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES
9.7. Size:1073K 1
cjac10th10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 8m @10V 100V 100A 10m @4.5V DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP
9.8. Size:5128K 1
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE
9.9. Size:2101K jiangsu
cjac110n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES
9.10. Size:1662K jiangsu
cjac110sn10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig
9.11. Size:2466K jiangsu
cjac100p03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU
9.12. Size:3049K jiangsu
cjac100sn08.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.9m @10V 80V 100A 4.3m @4.5V DESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte
9.13. Size:4609K jiangsu
cjac150n03.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES
9.14. Size:1073K jiangsu
cjac10th10.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 8m @10V 100V 100A 10m @4.5V DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP
9.15. Size:5128K jiangsu
cjac10h02.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE
Otros transistores... CJAB60N03, CJAC0410, CJAC100P03, CJAC100SN08, CJAC10H02, CJAC10TH10, CJAC110N03, CJAC110SN10, STP75NF75, CJAC150N03, CJAC20N03, CJAC20N10, CJAC40N04, CJAC50P03, CJAC70N03, CJAC75SN10, CJAC80N03
