CJAC13TH06 Todos los transistores

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID PDFNWB5 6-8L 2.2m @10V 60V 130A 3.0m @4.5V DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 3m @10V 60V 130A 4.5m @4.5V DESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(onTYP ID 3.4m @10V 100V 110A 4.5m @4.5V DESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L-B 80 V 100A 3.0m @10V DESCRIPTION These N-Channel enhancement mode power field effect transistors are using SGT technology.This advanced technology has been especially tailored to minimize on-state resistance, pr

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 8m @10V 100V 100A 10m @4.5V DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.8m @10V 30 V 110A 3.5m @4.5V DESCRIPTION FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC110SN10 N-Channel Power MOSFET PDFN 5 6-8L V(BR)DSS RDS(on)TYP ID 100V 4.3m @10V 110A DESCRIPTION The CJAC110SN10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Hig

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100P03 P-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.3m @-10V -30 V -100A 3.4m @-4.5V DESCRIPTION The CJAC100P03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATU

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC100SN08 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 2.9m @10V 80V 100A 4.3m @4.5V DESCRIPTION The CJAC100SN08 uses SGT technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES Batte

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC10TH10 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID PQFN 5 6-8L 8m @10V 100V 100A 10m @4.5V DESCRIPTION The CJAC10TH10 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES AP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB5 6-8L Plastic-Encapsulate MOSFETS CJAC10H0 N-Channel Power MOSFET ID V(BR)DSS RDS(on)MAX PDFNWB5 6-8L 2.0m @4.5V 20 V 100A 2.4m @2 .5V DESCRIPTION The CJAC10H02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FE