Справочник MOSFET. CJAC13TH06

 

CJAC13TH06 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: CJAC13TH06
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.3 ns
   Cossⓘ - Выходная емкость: 1635 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.003 Ohm
   Тип корпуса: PQFNWB5X6-8L
 

 Аналог (замена) для CJAC13TH06

   - подбор ⓘ MOSFET транзистора по параметрам

 

CJAC13TH06 Datasheet (PDF)

 ..1. Size:1216K  1
 cjac13th06.pdf pdf_icon

CJAC13TH06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFNWB56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)TYP ID PDFNWB56-8L 2.2m@10V60V 130A3.0m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURE

 ..2. Size:1292K  jiangsu
 cjac13th06.pdf pdf_icon

CJAC13TH06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PQFN 56-8L Plastic-Encapsulate MOSFETS CJAC13TH06 N-Channel Power MOSFETV(BR)DSS RDS(on)MAX ID PQFN 56-8L 3m@10V60V 130A4.5m@4.5VDESCRIPTION The CJAC13TH06 uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEATURES

 9.1. Size:2395K  1
 cjac110sn10a.pdf pdf_icon

CJAC13TH06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L Plastic-Encapsulate MOSFETS CJAC110SN10A N-Channel Power MOSFETPDFN 56-8L V(BR)DSS RDS(onTYP ID 3.4m@10V100V 110A4.5m@4.5VDESCRIPTION The CJAC110SN10A uses shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications FEA

 9.2. Size:1763K  1
 cjac100sn08u.pdf pdf_icon

CJAC13TH06

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 56-8L-B Plastic-Encapsulate MOSFETS CJAC100SN08U N-Channel Power MOSFETID V(BR)DSS RDS(on)TYPPDFN 56-8L-B 80 V100A3.0m@10VDESCRIPTION These N-Channel enhancement mode power field effect transistors areusing SGT technology.This advanced technology has been especiallytailored to minimize on-state resistance, pr

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... CJAB60N03 , CJAC0410 , CJAC100P03 , CJAC100SN08 , CJAC10H02 , CJAC10TH10 , CJAC110N03 , CJAC110SN10 , IRFP260 , CJAC150N03 , CJAC20N03 , CJAC20N10 , CJAC40N04 , CJAC50P03 , CJAC70N03 , CJAC75SN10 , CJAC80N03 .

History: PZD502CYB | STP10NK70ZFP | TPCA8010-H | AOB266L | UPA1820GR | L2N60D

 

 
Back to Top

 


 
.